PAM XIAMEN offers 2″ Silicon Wafer.
Material | Orient. | Diam. | Thck (μm) |
Surf. | Resistivity Ωcm |
Comment |
p-type Si:B | [111] | 2″ | 1000 | P/E | 0.001-0.005 | SEMI Prime |
p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | <0.01 | SEMI Prime |
p-type Si:B | [111] ±0.5° | 2″ | 500 | P/P | <0.01 {0.00087-0.00100} | SEMI Prime |
p-type Si:Ga | Poly. | 2″ | C/C | 0.024-0.036 | Gallium doped Concentrate (each with measured Gallium content) | |
n-type Si:P | [110] | 2″ | 280 | P/E | 19-33 | SEMI Prime, 1 Flat @ [1,-1,0], in hard cst |
n-type Si:P | [110] | 2″ | 280 | P/E | 19-33 | SEMI Prime, |
n-type Si:P | [110] ±0.5° | 2″ | 300 | P/E | 1-5 | SEMI Prime, , TTV<5μm |
n-type Si:Sb | [110] | 2″ | 375 | P/E | 0.005-0.020 | SEMI |
n-type Si:Sb | [110] | 2″ | 375 | P/E | 0.005-0.020 | SEMI |
n-type Si:P | [100] | 2″ | 400 | P/P | 210-880 | SEMI Prime, |
n-type Si:P | [100] | 50mm | 280 | P/E | 130-280 | SEMI Prime, |
n-type Si:P | [100] | 2″ | 300 | P/P | 33-48 | SEMI TEST – Some wafers have scratches, |
n-type Si:P | [100] | 2″ | 300 | P/P | 10-30 | SEMI Prime |
n-type Si:P | [100] | 2″ | 300 | P/P | 10-30 | SEMI Prime |
n-type Si:P | [100] | 2″ | 300 | P/P | 10-30 | SEMI Prime |
n-type Si:P | [100] | 2″ | 300 | P/P | 10-30 | SEMI |
n-type Si:P | [100] | 2″ | 500 | P/P | 5-10 | SEMI Prime, |
n-type Si:P | [100] | 2″ | 280 | P/E | 3-9 | SEMI Prime |
n-type Si:P | [100] | 2″ | 280 | P/E | 3-9 | SEMI Prime |
n-type Si:P | [100] | 2″ | 200±30µm | P/P | 1.25-2.50 | SEMI Prime |
n-type Si:P | [100] | 2″ | 280 | P/P | 1.25-2.50 | SEMI Prime |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.