PAM-XIAMEN is able to supply nitrogen (N) doped silicon wafers, specifications please refer to:
https://www.powerwaywafer.com/silicon-wafer.
The doping of nitrogen as an impurity into silicon crystals not only has a beneficial effect on the performance of silicon wafers, but also has an important impact on the physical [...]
2024-04-16meta-author
Fabrication of GaN wafers for electronic and optoelectronic devices
The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]
PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers for 650V power switching device fabrication.
Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on [...]
2019-02-11meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 (STO) single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality [...]
2019-05-14meta-author
PAM-XIAMEN can offer EFG grown Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy [...]
2021-04-19meta-author
PAM XIAMEN offers Silicon Nitride ( Si3N4) Substrate.
Silicon nitride is synthesized through several different chemical reaction methods. Parts are pressed and sintered by well developed methods to produce a ceramic sheet with a unique set of outstanding properties. The material is dark gray [...]
2019-04-18meta-author