1-1.lattice parameter
The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
2018-06-28meta-author
3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
2018-06-28meta-author
3-10. Carrots
Similar to comet tails in appearance except they are more angular and lack a discrete head. If present, these features are aligned parallel to the major at. Usually,any carrots present tend to be of the same length. Count once per occurrence. Two [...]
2018-06-28meta-author
5-3-1 High-Temperature Device Operation
The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain
semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor
device functionality at much higher temperatures than silicon . As discussed in basic
semiconductor electronic [...]
2018-06-28meta-author
2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2018-06-28meta-author
5-4-3 Growth of Hexagonal Polytype SiC Wafers
In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]
2018-06-28meta-author