Effects of mosaic structure on the physical properties of CdZnTe crystals
Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
2013-09-23meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
n- Si:P
7±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±0.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
21
n- Si:P
150 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
22.5
n- Si:P
12±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28.5
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
26
n- Si:P
18±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
11
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27
n- Si:P
220 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27.5
n- Si:P
>250
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
28
n- Si:P
165 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
43688
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
9-11
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
11±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
8-12
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
30
n- Si:P
11±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
4±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
5
n- Si:P
1.5±10%
N/N/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers LD Bare Bar for 880nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 880nm
Filling Factor: 30%
Output Power: 80W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers 6″ FZ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 6″ {150.0±0.3mm}Ø×625±15µm,
FZ Intrinsic undoped Si:-[100]±0.5°,
Ro > 20,000 Ohmcm,
Both-sides-polished, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, [...]
2019-04-25meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]