Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, simple operation
For more information, please send us email at victorchan@powerwaywafer.com
Two-dimensional (2D) arrays of nanometre scale holes were opened in thin SiO2 layers on silicon by electron beam lithography and chemical etching. Oxidized silicon wafers with a 5 nm thick SiO2 layer on top were used in this respect. Pattern transfer involved either only removal of SiO2 or [...]
PAM XIAMEN offers LD Bare Bar for 808nm@cavity 1.5mm. Brand: PAM-XIAMEN Wavelength: 808nm Filling Factor: 50% Output Power: 300W Cavity Length:1.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, [...]
LAALO3 LANTHANUM ALUMINATE CRYSTAL SUBSTRATES PAM XIAMEN offers LaAlO3 Lanthanum Aluminate Crystal Substrates. LaAlO3 single crystal substrates are commonly used for epitaxial growth of thin films such as high Tc superconductors, magnetic and ferroelectric materials. The dielectric properties of LaAlO3 crystal make it suitable for low [...]
PAM XIAMEN offers Large Size Photomask. Chromium plate accuracy (Standard Size:430mmx430mm) Accuracy/Grade Max Accuracy High-precision Medium accuracy General accuracy Min.Line/Space Width 0.75μm/0.75μm 5μm/5μm 10μm/10μm 20μm/20μm CD Control ±0.15μm(QZ) ±0.5μm ±1.0μm ±2.0μm Total Pitch Accuracy ±0.5μm(QZ) ±1.0μm ±2.0μm ±2.0μm Registration Accuracy ±0.5μm(QZ) ±1.0μm ±2.0μm ±3.0μm Overlay Accuracy ±0.5μm(QZ) ±1.0μm ±2.0μm ±3.0μm Orthogonality ±0.75μrad ±2.0μrad ±3.0μrad ±4.0μrad Chrome plate material (Photomask blank plate) Material SodaLimeGlass、Quartz Max. Size 850mm*1400mm Normal Size 420mmx520mm,520mm*610mm,520mm*800mm,700mm*800mm, 800mm*920mm,800mm*960mm,850mm*1200mm,850mm*1400mm Thickness 2.3±0.2mm,3.0±0.2mm,4.8±0.2mm,7.8±0.2mm, 5.0±0.2mm(QZ),8.0±0.2mm(QZ),10.0±0.2mm(QZ) Film Type LowReflectanceChrome Optical Density (λ=450nm) BetweenPlates3.0±0.3InPlate±0.3 Reflectivity (λ=436nm) BetweenPlates10±5%InPlate±2% Main application areas: 1、LCD, TFT, CF, TouchPanel, OLED, PDP and other flat panel display industries 2、HDI, [...]
