Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, simple operation
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PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm. Specifications: Crystal: 0.8 nm MoS2 EPI film on SiO2/Si Si(100) 10×10 x0.5 mm,1sp MoS Film: 0.8nm SiO2=300nm For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 5000 – 10000 [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst p-type Si:B [100] 3″ 300 P/P 0.5-10.0 SEMI Prime, TTV<2μm, Empak cst p-type Si:B [100] 3″ 315 P/P 0.5-10.0 SEMI Prime, TTV<3μm p-type Si:B [100] 3″ 3,050 ±50 C/C >0.5 1Flat, Individual cst (can be ordered singly) p-type Si:B [100] 3″ 250 P/E 0.15-0.20 SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers p-type Si:B [100] 3″ 250 BROKEN 0.15-0.20 Broken wafers, in Epak cst p-type Si:B [100] 3″ 356 P/P 0.015-0.020 SEMI p-type Si:B [100-4° towards[110]] ±0.5° 3″ 230 P/E 0.01-0.02 SEMI Prime, TTV<5μm p-type Si:B [100] 3″ 300 P/E 0.01-0.02 SEMI Prime p-type [...]
SPCW is a counting module based on CZT detector. It integrates CZT detector, high gain charge sensitive amplifier and SK shaping circuit. The radiation dose rates ranges from 0.1μGy/h~1Gy/h will be its guest. 1. Specification of SPCW Wide Range Radiation Doses Module Energy range 30KeV~1.5MeV Radiation dose rate [...]
Layer structure of 703nm Laser We can offer Layer structure of 703nm Laser as follows: Layer Composition Thickness (um) Doping(cm-3) Cap P+- GaAs 0.2 Zn:>1e19 Cladding p – Al0.8Ga0.2As 1 Zn:1e18 Etch stop GaInP 0.008 Zn:1e18 Top barrier Al0.45Ga0.55As 0.09 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Barrier Al0.45Ga0.55As 0.01 Undoped Well Al0.18Ga0.82As 0.004 Undoped Bottom barrier Al0.45Ga0.55As 0.09 Undoped Cladding n – Al0.8Ga0.2As 1.4 Si:1e18 Buffer n – GaAs 0.5 Si:1e18 Substrate n+ – GaAs S :>1e18 Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected]
Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]
