Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, simple operation
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A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for [...]
PAM XIAMEN offers 150mm&200mm Silicon Wafer.Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade150 N Phos CZ -100 1-20 180-200 P/P PRIME150 N Phos CZ -100 1-100 500-550 P/P PRIME150 N Phos CZ -100 1-100 500-600 P/E TEST150 N Phos CZ -100 1-100 650-700 P/E/DTOx PRIME150 N Phos CZ -100 1-100 650-700 P/E/Ni PRIME150 N Phos CZ -100 1-20 650-700 P/E/OX PRIME150 N Phos CZ -100 1-20 650-700 P/E/WTOx150 P Boron CZ -100 1-20 180-200 P/P PRIME150 P Boron CZ -100 1-100 500-550 P/P PRIME150 P Boron CZ -100 1-100 500-600 P/E TEST150 P Boron CZ -100 .001-.005 650-700 P/E PRIME150 P Boron CZ -100 1-100 650-700 P/E/DTOx PRIME150 P Boron CZ -100 1-100 650-700 P/E/Ni PRIME150 P Boron CZ -100 1-20 650-700 P/E/OX PRIME150 P Boron CZ -100 1-20 650-700 P/E/WTOx150 P Boron CZ -100 1-20 950-1050 P/E PRIME150 P Boron CZ -100 1-20 950-1050 P/P PRIME150Undoped VGF -100 >1E7 500-600 P/P150Undoped VGF -100 >1E7 500-600 P/P150 N Si VGF -100650-700 P/E PRIME150 P Zn VGF -100650-700 P/E PRIME150 Si Undoped VGF -100 >1E7 500-600 P/P TEST150 Si Undoped VGF -100 >1E7 500-600 P/P TEST150 Si Undoped VGF -100 >1E7 610-660 P/P EPI150 Si Undoped VGF -100 >1E7 650-700 P/E PRIME150Single Wafer Shipper ePak Lid/Base/SpringHolds1WaferClean Room150 Round Single Wafer Shipper ePak Lid/Base/SpringHolds1WaferClean Room150Shipping Cassette ePakHolds25WafersClean Room200 N Phos CZ -100 1-20 700-750 P/E/OX PRIME200 P Boron CZ -100 1-100 600-800 P/E TEST200 P Boron CZ -100 1-20 700-750 P/E/OX PRIMEFor more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented polycrystalline)/Cr [...]
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm. PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 5000 – 10000 Ohm.cm [...]
This study simulates thermal conductivity via a carrier scattering mechanism and the related parameters are obtained based on first principles for intrinsic and doped silicon carbide (SiC) over a temperature range of 300–1450 K. The theoretical analysis results show that the thermal conductivity decreases with [...]
PAM XIAMEN offers Zero Diffraction Plate. Si Single Crystal Zero Diffraction Plate for XRD Desktop X-Ray Orientation Machine for Single Crystal Orientation Measurement Zero Diffraction Plate for XRD: 17.8 Dia x1.0 t mm with Cavity 10 IDx0.1 mm, Si Crystal Zero Diffraction Plate for [...]
