Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, simple operation
For more information, please send us email at victorchan@powerwaywafer.com
PAM-XIAMEN offers crucibles and coating products of PBN material including PBN Crucibles,PBN Plates,PBN Coating,PBN Heaters. These PBN (Pyrolytic Boron Nitride) products are widely used in such fields as optoelectronic,microelectronics,solar energy and powder sintering. [...]
PAM XIAMEN offers TGG (Terbium Gallium Garnet). TGG singlecrystal（ Terbium Gallium Garne ） is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm. TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
PAM XIAMEN offers high-quality BaTiO3. BaTiO3 Substrates (111) BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains) BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains) BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains) BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
