Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, simple operation
For more information, please send us email at victorchan@powerwaywafer.com
We are investigating the feasibility of a high resolution positron emission tomography (PET) insert device based on the CdZnTe detector with 350 µm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution. In this paper, we [...]
2″ Free Standing Gallium Nitride (GaN) Substrate PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
PAM XIAMEN offers 6″FZ Silicon Wafer-1 Silicon wafers, per SEMI Prime, P/E 6″Ø×675±25µm FZ p-type Si:B[110]±0.5° Ro > 1,000 Ohmcm, One-sidepolished, backside Alkaline etched 2 Flats Sealed in Empak or equivalent cassette For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services announced the new availability of size 2-4″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We [...]
Thinking thin brings new layering and thermal abilities to the semiconductor industry This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or [...]
PAM XIAMEN offers 2004nm laser diode wafers. Available Center Wavelengths: 1970 nm – 2051 nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 3mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 12 pm/mA Slope Efficiency (typical): 0.12 [...]
