Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, simple operation
For more information, please send us email at victorchan@powerwaywafer.com
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 381 P/E 0.085-0.115 SEMI Prime, Primary Flat @ [111]±0.5°, Secondary @ [111] 109.5° CW from Primary, in Epak cassettes of 6, 7 & 7 wafers p-type Si:B [110] ±0.3° 3″ 381 P/E 0.0448-0.0672 SEMI Prime, Primary @ [111], Secondary @ [111] 109.5±2° CW from Primary, hard cst p-type Si:B [110] [...]
Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]
Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts [...]
Al2O3 (Sapphire) PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter: 1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″ Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM Al2O3- Sapphire Wafer, [...]
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the [...]
