PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm.
Specifications:
Crystal: 0.8 nm MoS2 EPI film on SiO2/Si
Si(100) 10×10 x0.5 mm,1sp
MoS Film: 0.8nm
SiO2=300nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-28meta-author
PAM XIAMEN offers Glass Substrates(Mo-Coated sodalime Glass and TiO2 Coated Sodalime Glass and ZnO Coated Sodalime Glass).
Mo-Coated sodalime Glass
Mo-coated Sodalime Glass, 100 mm(L) x 100 mm(W) x 1.1 mm thk
Mo-coated Sodalime Glass, 20 mm(L) x 15 mm(W) x 0.7 mm th [...]
2019-04-18meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
PAM XIAMEN offers GaP Substrate (100) .
GaP (100) undoped
GaP Wafer, undoped (100) 10x10x0.5 mm, 1sp
GaP Wafer, undoped (100) 10x10x0.5 mm, 2sp
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp, R: 1.5×10^14 ohm.cm, Semi-Insulating
GaP wafer undoped (100) 2″ diaX 0.45mm 1sp,R: [...]
2019-04-22meta-author
Chamfer is to grind away the sharp edges and corners around the wafer. Its purpose is to make the mechanical strength of the wafer bigger prevent the wafer edge from cracking, to prevent damage caused by thermal stress, and to increase the flatness of [...]
2022-06-10meta-author
As the basis for making photovoltaic cells and integrated circuits, silicon wafer cleaning is very important. The effect of cleaning directly affects the final performance, efficiency and stability of photovoltaic cells and integrated circuits. Cleaning the silicon wafer not only removes impurities on the [...]
2022-06-24meta-author