3″ FZ Prime Silicon Wafer

PAM XIAMEN offers 3″ FZ Prime Silicon Wafer.

3″ Si FZ
39-47Ωcm
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-07-01

Temperature dependent growth of InGaN/GaN single quantum well

Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the [...]

2014-02-26meta-author InGaN

BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES

PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES. Physical Parameters Crystal structure Tetragonal, tP5, P4mm, No. 99 Growth method Top seeded solution method Unit cell constant a=3.995 Å Melt point (℃) 1,625 °C (2,957 °F; 1,898 K) Density (g/cm3) 6.02 Hardness (mohs) 6-6.5 Thermal expansion(/℃) 9.4×10-6 Dielectric constants ea = 3700, ec = 135 (unclamped) ea = 2400, e c = 60 (clamped) Chemical stability Insoluble in water Transmission wavelength 0.45 ~ 6.30 mm Size 10×3m, 10×5m, 10×10mm, 15×15mm, [...]

2019-03-11meta-author

Fabrication of GaN wafers for electronic and optoelectronic devices

Fabrication of GaN wafers for electronic and optoelectronic devices The fabrication of GaN wafers from GaN boules (ingots) is described. Gallium nitride boules were grown by hydride vapor phase epitaxy and sliced and sized into wafer blanks. The GaN wafer blanks were lapped and polished. [...]

2013-09-26meta-author Fabrication of GaN wafers, Gallium nitride, GaN, Substrate

Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics

Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]

2013-10-15meta-author Cumulative energy demand (CED), Germanium wafer, Payback time

3″ Silicon Wafer-2

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211-5°] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 508 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 Prime n-type Si:P [211] ±0.5° 3″ 1016 P/P FZ 25-75 SEMI TESt n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 10,000-12,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±0.5° 3″ 415 ±15 BROKEN FZ 10,000-12,000 Broken E/E wafers, in two pieces, Lifetime>1,500μs, n-type Si:P [111] ±0.5° 3″ 2500 C/C FZ 7,000-13,000 SEMI, Individual cst n-type Si:P [111] ±0.5° 3″ 370 P/E FZ >5,000 SEMI [...]

2019-03-06meta-author

Indium Arsenide Ingot with Zinc Blende Structure Grown By VGF

PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]

2021-06-23meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

3″ FZ Prime Silicon Wafer

3″ FZ Prime Silicon Wafer

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