3″ FZ Prime Silicon Wafer

PAM XIAMEN offers 3″ FZ Prime Silicon Wafer.

3″ Si FZ
39-47Ωcm
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-07-01

Share this post

Related Posts

4″ Silicon Wafer-13

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [211] ±0.5° 4″ 1,500 ±15 P/P 0.01-0.02 SEMI Prime, TTV<1μm n-type Si:Sb [211] ±0.5° 4″ 1600 C/C 0.01-0.02 SEMI Test, Wafers can be polished for additional fee n-type Si:P [111] 4″ 1200 P/P 35-85 SEMI Prime n-type Si:P [111] ±0.5° 4″ 1500 P/E >20 {24-29} SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers n-type Si:P [111] ±0.5° 4″ 250 P/E 18-25 SEMI Prime n-type Si:P [111] ±0.5° 4″ 500 P/P 11-15 SEMI Prime, Both-sides Epi Ready polished n-type Si:P [111] 4″ 280 P/E 1.3-2.7 SEMI Prime n-type Si:P [111] ±0.5° 4″ 280 P/E 1.3-2.7 SEMI Prime n-type [...]

2019-03-05meta-author
4″ Silicon EPI Wafer-1

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 21 n- Si:P 0.15 n/n+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 – 440 n/n+ 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5 p- Si:B 3.6±10% P/P/P+ 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 22±1.5 p- Si:B 300±50 P/P/P+ 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1 p- Si:B 4.5±10% P/P/P+ 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 6.85±0.75 p- Si:B 0.75±0.15 P/P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+ 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+ 4″Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+ 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 ±10% P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 80±10% P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 200±10% P/P+ 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 32 p- Si:B 600 ±10% P/P+ 4″Øx440μm p- Si:B[111] 0.01-0.02 P/E 32.5 p- Si:B 100±10% P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 40 p- Si:B 550 ±10% P/P+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 p- Si:B 10±1.5 P/N/N+ 4″Øx525μm n- [...]

2019-03-08meta-author
YSZ crystal-2

PAM XIAMEN offers YSZ crystal. YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter. YSZ Substrate (110) YSZ (110) 0.5″x0.5″x0.5mm, 1SP YSZ (110) 0.5″x0.5″x0.5mm, [...]

2019-05-21meta-author
Gartner: worldwide semiconductor revenue declined 2.3% in 2015

 Gartner: worldwide semiconductor revenue declined 2.3% in 2015   Worldwide semiconductor revenue totaled 334.8 billion dollar in 2015, a 2.3 percent decline from 2014, according to final results by Gartner. The combined revenue of the top 25 semiconductor vendors fell by 0.5 percent during 2015. This was [...]

2016-07-04meta-author
GaAs/AlGaAs/GaAs epi wafer

GaAs/AlGaAs/GaAs epi wafer We can offer 2″ GaAs/AlGaAs/GaAs epi wafer, please see below typical structure: S.No Parameters Specifications 1 GaAs substrate layer thickness 500μm 2  layer thickness 2μm 3 GaAs top layer thickness 220 nm 4 Mole fraction of Al (x) 0.7 5 Doping level Intrinsic Source: PAM-XIAMEN If you need more information about GaAs/AlGaAs/GaAs epi wafer, please visit our website:https://www.powerwaywafer.com/, send us email at [...]

2013-11-19meta-author
4″ FZ Silicon Ignot-4

PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1,000µs For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]

2019-07-05meta-author