When it comes to choosing a material as the basic material for transistors in computers, the key matter we need to consider is resistance. Conductors have very low resistance and can conduct electricity easily; insulators have high resistance and cannot conduct electricity. For transistors, [...]
2022-06-21meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″ is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We [...]
2017-07-11meta-author
InP-based three-terminal electronic devices mainly include InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). PAM-XIAMEN can provide indium phosphide (InP) HEMT epi wafer, in which InGaAs use as the channel material and InAlAs as the barrier layer. The InP HEMT structure [...]
2022-07-22meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
280
P/P
1-5
SEMI Prime,
Si:P
[100-6°]
2″
300
P/E
1-5
SEMI Prime,
n-type Si:P
[100]
2″
350
P/P
1-50
Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats
n-type Si:P
[100] ±1°
2″
400 ±15
P/P
1-10
SEMI Prime, TTV<3μm, Empak cst
n-type Si:P
[100]
2″
3175
P/E
1-3
Prime, NO Flats, Individual cst
n-type Si:P
[100] ±1.0°
2″
6000
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
300
P/P
0.8-1.0
SEMI Prime,
n-type Si:Sb
[100]
2″
300
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[100]
2″
500
P/P
0.01-0.02
SEMI Prime, , in [...]
2019-03-07meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Frequency Comb Generation From Stimulated Brillouin Scattering and Semiconductor Laser Diodes
Published by:
(Electrical Engineering) in The [...]
2019-10-31meta-author
As one of the leading GaN on silicon companies, PAM-XIAMEN offers GaN on Silicon wafer Substrate. Single crystal silicon wafer substrate is undoubtedly the most potential substrate material for growing III Nitride template due to the advantages of high quality, low price, easy cleavage and etc. The [...]
2019-04-22meta-author