PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 700-730um.
12” 300mm dummy grade wafers
Surface is double side polished
thickness 700-730um
V Notch(SMI STD)
slight scratch(with no stains or heavy/deep scratches)
Dummy grade silicon wafers perform very efficiently for experimental and testing projects. These [...]
2019-06-24meta-author
The structures of InxGa1-xAsyP1-y (indium gallium arsenide phosphide) quantum well epitaxially grown on InP substrate can be purchased or customized from PAM-XIAMEN. By adjusting the composition of x and y, the coverage wavelength range is from 870nm (GaAs) to 3.5um (InAs), which includes the optical [...]
2021-10-25meta-author
PAM XIAMEN offers FZ Intrinsic undoped Silicon wafers.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-08-22meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
325
P/E
FZ 100-200
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
FZ 7,000-10,000
SEMI Prime
p-type Si:B
[100]
3″
350
P/P
FZ 1-5
SEMI Prime
p-type Si:B
[100]
3″
160 ±10
P/P
FZ 0.5-10.0
SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
p-type Si:B
[100]
3″
890 ±13
P/P
FZ 0.5-10.0
SEMIt, TTV<8μm
p-type Si:B
[111] ±0.5°
3″
380
P/E
FZ 8,000-10,000
SEMI TEST (has scratches), in hard cst
p-type Si:B
[111] ±0.5°
3″
475
P/E
FZ >4,400
SEMI Prime, TTV<5μm
p-type Si:B
[111] ±0.25°
3″
400
P/E
FZ >100
SEMI Prime
n-type Si:P
[100]
3″
380
P/P
FZ 7,000-18,000
SEMI Prime
n-type [...]
2019-03-06meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates that we have in stock!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
6
DSP
Antimony
N+
100
57,5 ± 2,5
110 ± 0,50
0.0 ± 0.5°
0.01 – 0.02 Ohmcm
150 ± 0.2 mm
300 ± 10 µm
30
10
30
6
DSP
Arsenic
N+
100
57,5 ± 2,5
110 ± 1
0.0 [...]
2019-02-25meta-author
PAM XIAMEN offers nitride coated silicon wafers.
Stoichiometric LPCVD Nitride on Silicon Wafer Specification
Thickness range: 100Å – 4500Å
Sides processed: Both
Refractive index: 2.00 +/-.05 @632nm
Film stress: >800MPa Tensile Stress
Wafer size: 1″ -12″inches
Temperature: 800C°
Gases: Dichlorosilane, Ammonia
Equipment: Horizontal vacuum furnace
Nitride
LPCVD
PECVD
[...]
2019-02-11meta-author