Epitaxial lift-off process enables the separation of III–V device layers from gallium arsenidesubstrates and has been extensively explored to avoid the high cost of III–V devices by reusing the substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready [...]
A template-based vision system for the 100% inspection of wafer die surfaces has been developed. Design goals included a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in. wafer size. Each die is treated [...]
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
950-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1000-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
1975-2025
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-100
10-60
9900-10100
P/E
PRIME
76.2
N
Phos
CZ
-111
300-350
P/P
PRIME
76.2
N
Phos
CZ
-111
350-400
P/E
PRIME
76.2
N
Phos
CZ
-111
1975-2025
P/P
PRIME
76.2
N
Phos
CZ
-111
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
4900-5100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
76.2
N
Phos
CZ
-110
300-350
P/P
PRIME
76.2
N
Phos
CZ
-110
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
76.2
P
Boron
FZ
-100
>3000
300-350
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM-XIAMEN offers p type electronic grade Germanium (Ge) wafer. Germanium is a chemical element. Its chemical symbol is Ge. Its atomic number is 32 and the atomic weight is 72.64, belonging to the IVA group elements. So the germanium electron configuration must have 32 [...]
2019-03-15meta-author
PAM XIAMEN offers 5″ FZ Silicon wafers
Silicon wafers, per SEMI Prime,
P/P 5″Ø×240±10µm,
FZ p-type Si:B[100]±0.5°,
Ro=(240-280)Ohmcm,
TTV<5µm, Bow<25µm, Warp<25µm,
Both-sides-polished,
SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM XIAMEN offers Ni -Polycrystalline Substrate & Foil & Foam.
tomic number: 28
Atomic number: 28
Atomic mass: 58.71 g.mol -1
Atomic mass: 58.71 g.mol -1
Crystal structure: F.C.C
Crystal structure: F.C.C
Lattice Constant: 0.325 nm
Lattice Constant: 0.325 nm
Ni -Polycrystalline Substrate & Foil & Foam
Ni Metallic Substrate ( polycrystalline): 1″ x 1″ x 1.0 mm, 1 side [...]
2019-05-13meta-author