PAM XIAMEN offers InSb Wafer.
InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1
InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]

2019-05-07meta-author

PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/E
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
7-11
SEMI Prime
n-type Si:P
[100]
4″
224
P/E
5-10
SEMI Flats (two), Cassette of 12 + 13 wafers
n-type Si:P
[100]
4″
224
BROKEN
5-10
SEMI Test
n-type Si:P
[100]
4″
500
P/P
4-6
SEMI Prime
n-type Si:P
[100]
4″
350 ±10
P/P
3-5
SEMI Prime
n-type Si:P
[100]
4″
350
P/P
3-5
SEMI Test, Haze, pits, scratches
n-type Si:P
[100]
4″
450
C/C
3-5
SEMI Prime
n-type Si:P
[100]
4″
525
P/P
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime
n-type Si:P
[100]
4″
525
P/E
3-9
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
500 ±10
P/P
2-5
SEMI TEST (wafers have spots resembling water splashes, [...]

2019-03-05meta-author

PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
250
P/P
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.01-0.02
SEMI,
p-type Si:B
[100]
2″
500
P/P
0.01-0.02
SEMI Prime,
p-type Si:B
[100]
2″
600
P/E
0.01-0.05
SEMI Prime,
p-type Si:B
[100]
2″
525
P/E
0.005-0.020
SEMI Prime, , TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
P/E
SEMI Prime
p-type Si:B
[100]
2″
525
P/P
<0.01 {0.0076-0.0078}
SEMI Prime, , in hard cassettes of 5 wafers.
p-type Si:B
[111] ±0.5°
2″
275
P/E
1-30
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type [...]

2019-03-07meta-author

PAM XIAMEN offers8″ Silicon Wafer-3
Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Notch SEMI STD
Chamfer width 250-350μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
With more than 25+years experiences in compound semiconductor material field and [...]

2019-09-20meta-author

PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes (p-n junction SiC epi wafer) as follows:
SiC-On-SiC Epi Wafer For Pin-Diodes
1. Specifications of SiC Epitaxy on Silicon Carbide Substrate
pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: [...]

2020-08-04meta-author

The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of [...]

2022-08-16meta-author