A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere to 1600 °C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were [...]
2019-11-15meta-author
PAM XIAMEN offers LD Bare Bar for 940nm@cavity 3mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 50%
Output Power: 200W
Cavity Length:3mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:As[111]
0.001-0.005
P/E
21
n- Si:P
0.15
n/n+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
22±1.5
p- Si:B
300±50
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
6.85±0.75
p- Si:B
0.75±0.15
P/P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 ±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
80±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
23
p- Si:B
200±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
32
p- Si:B
600 ±10%
P/P+
4″Øx440μm
p- Si:B[111]
0.01-0.02
P/E
32.5
p- Si:B
100±10%
P/P+
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
40
p- Si:B
550 ±10%
P/P+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
p- Si:B
10±1.5
P/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
400
P/P
0.001-0.005
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
0.001-0.005
SEMI Prime, Wafers with striation marks
p-type Si:B
[100]
4″
525
P/P
0.001-0.005
SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.002
SEMI Prime, TTV<4μm
p-type Si:B
[100]
4″
525
P/E
0.001-0.005
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
525
BROKEN
0.001-0.005
Broken wafer (shattered into many pieces)
p-type Si:B
[100]
4″
800
C/C
0.001-0.005
SEMI, With striation marks
p-type Si:B
[100]
4″
?
P/P
SEMI Test
p-type Si:B
[100]
4″
375
P/E
<0.0015 {0.00091-0.00099}
SEMI Prime, TTV<3μm
p-type Si:B
[111]
4″
350
P/E
2-3
Prime, NO Flats
p-type Si:B
[111]
4″
1000
P/P
1-10
SEMI Prime, Cassettes of 10 [...]
2019-03-05meta-author
GaN template with single side polished and atomic step is available, which is grown on 4H or 6H SiC C-axis (0001) substrate. GaN growth on SiC substrate can achieve lower thermal expansion, lower lattice mismatch, and excellent thermal conductivity, thereby giving full play to [...]
2021-09-16meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author