LD Bare Bar for [email protected] 3mm

PAM XIAMEN offers LD Bare Bar for [email protected] 3mm.

Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 50%
Output Power: 200W
Cavity Length:3mm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-05-09

In — Indium Foil

PAM XIAMEN offers Indium Foil. Indium ( In ) Foil: 100 mm (W) x 100 mm ( L） x 0.1 mm ( T) Polycrystal In Foil Purity: > 99.995% Size: 0.10 mm thickness x 100mm width x 100 mm Length Surface finish: as cold rolling [...]

2019-05-08meta-author

Rapid heating thermal shock behavior study of CVD ZnS infrared window material: Numerical and experimental study

Highlights • The temperature-dependent strengths of CVD ZnS were obtained. • The thermal shock behavior of infrared window was studied by finite element method. • Rapid heating thermal shock tests were conducted to validate the numerical results. Abstract The thermal shock failure has been recognized as one of key failure modes of [...]

2018-01-24meta-author

GGG ND:GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES

PAM XIAMEN offers GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES. Nd:GGG (neodymium doped gadolinium gallium garnet) Chemical formula: Nd:Gd3Ga5O12 Nd:GGG single crystal has excellent properties, such as high mechanical strength, chemical stability, thermal conductivity and thermal capacity, wide absorption bands at around 808 nm and long [...]

2019-03-12meta-author

CeO2 Epi Film on YSZ – Can’t Offer Temporarily

PAM XIAMEN offers CeO2 Epi Film on YSZ. CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm Epitaxial thin Film Composition <100> CeO2 Epitaxial Film Thickness 40 nm +/- 10 nm Growth method Spin coating Epitaxial FWHM < 5 o Substrate <100>, YSZ, 10x10x0.5 mm, one side polished CeO2 Film (40 nm one side) on YSZ [...]

2019-04-19meta-author

Origin, modeling and suppression of grinding marks in ultra precision grinding of silicon wafers

A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]

2013-09-13meta-author grinding marks silicon wafers

GaN Substrates Offer High Performance At A Price

GaN Substrates Offer High Performance At A Price GaN substrates are manufactured by only a handful of companies at prices prohibitive to volume production, but offer great potential for high-performance devices. Richard Stevenson reports.The GaN component market was worth $1.35 billion in 2003 according to [...]

2013-03-21meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

LD Bare Bar for [email protected] 3mm

LD Bare Bar for [email protected] 3mm

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Related Posts

In — Indium Foil

Rapid heating thermal shock behavior study of CVD ZnS infrared window material: Numerical and experimental study

GGG ND:GD3GA5O12 NEODYNIUM DOPED GADOLINIUM GALLIUM GARNET CRYSTALS SUBSTRATES

CeO2 Epi Film on YSZ – Can’t Offer Temporarily

Origin, modeling and suppression of grinding marks in ultra precision grinding of silicon wafers

GaN Substrates Offer High Performance At A Price

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

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Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

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CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers