PAM-XIAMEN can supply SiC epitaxial wafers for MOSFET devices, additional information please read: https://www.powerwaywafer.com/sic-mosfet-structure.html. The epitaxial process of SiC inevitably forms various defects, which affect the performance and reliability of SiC power devices. Below, we specifically explore the impact of triangle defects on the [...]
2024-03-14meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3197
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3198
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3199
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3200
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3201
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3202
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3203
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3204
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3205
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-15meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime,
n-type Si:P
[111]
2″
500
P/E
2.2-3.8
SEMI Prime,
n-type Si:P
[111]
2″
300
P/E
1-10
SEMI Prime, , TTV<5μm
n-type Si:P
[111]
2″
500
P/E
1-10
SEMI Prime,
n-type Si:P
[111] ±0.5°
2″
6000
P/E
1-10
SEMI Prime, Individual cst
n-type Si:Sb
[111] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime,
n-type Si:Sb
[111-3.5°] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime, , in hard cassettes of 5 & 8 wafers
n-type Si:Sb
[111]
2″
2900
P/P
0.013-0.015
Prime, NO Flats, Individual cst
n-type Si:Sb
[111-2.5°] ±0.5°
2″
280
P/E
0.012-0.017
SEMI,
n-type Si:As
[111] ±0.5°
2″
279
P/E
0.001-0.005
SEMI Prime
p-type [...]
2019-03-07meta-author
PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied to prepare IGBT devices and bipolar devices, solving the problem of missing p-type substrates in the SiC industry.
At present, significant breakthroughs have been made in [...]
2024-03-18meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Antimony
N+
100
32,5 ± 2,5
110 ± 1
180 ± 5.0 °, 18.00 ± 2.00 mm
0.0 ± 1.0 °
0.010 – 0.020 Ohmcm
100.0 ± 0.5 mm
340 ± 10 µm
2
4
DSP
Antimony
N+
100
32,5 [...]
2019-02-25meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author