The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator.
The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device.
The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures.
We present empirical evidence that SiO2/AlGaN/GaN MOS HEMTs outperform the unpassivated AlGaN/GaN HEMTs with DC performances. The piezotronic effect is then introduced to modulate the drain current of HEMTs by applying external stresses on the devices effectively. This study provides in-depth comprehension into working principle of the piezotronic effect modulating physical properties of 2DEG in AlGaN/GaN hetero structures as well as guidance for the potential application in HEMT and MEMS/NEMS devices.
AlGaN/GaN HEMT;2DEG;Piezotronic-effect;External stress