M Plane N-GaN Freestanding GaN Substrate

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M Plane N-GaN Freestanding GaN Substrate

M Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate

ItemPAM-FS-GAN M-N
Dimension5 x 10 mm2
Thickness380+/-50um
OrientationM plane (1-100) off angle toward A-axis 0 ±0.5°

M plane (1-100) off angle toward C-axis -1 ±0.2°

Conduction TypeN-type
Resistivity (300K)< 0.05 Ω·cm
TTV≤ 10 µm
BOWBOW ≤ 10 µm
Surface RoughnessFront side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.

Dislocation Density≤ 5 x 10 6cm-2
Macro Defect Density0 cm-2
Useable Area> 90% (edge exclusion)
Packageeach in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-17

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