M Plane N-GaN Freestanding GaN Substrate

  • Home
  • News
  • M Plane N-GaN Freestanding GaN Substrate

M Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate:

Item PAM-FS-GAN M-N
Dimension 5 x 10 mm2 or 5 x 20 mm2
Thickness 380+/-50um
Orientation M plane (1-100) off angle toward A-axis 0 ±0.5°

M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type N-type / Si Doped
Resistivity (300K) < 0.05 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at [email protected] and [email protected]

2020-08-17

Share this post

Related Posts

Nickel Substrate & Foil-2

PAM XIAMEN offers Ni -Polycrystalline Substrate & Foil & Foam. tomic number:  28  Atomic number:  28  Atomic mass:     58.71 g.mol -1 Atomic mass:     58.71 g.mol -1 Crystal structure:  F.C.C Crystal structure:  F.C.C Lattice Constant:         0.325 nm  Lattice Constant:         0.325 nm    Ni -Polycrystalline Substrate & Foil & Foam Ni Metallic Substrate ( polycrystalline): 1″ x 1″ x 1.0 mm, 1 side [...]

2019-05-13meta-author
4″ FZ Intrinsic Silicon Wafer SSP

PAM XIAMEN offers 4″ FZ Intrinsic Silicon Wafer SSP 4″ FZ (100) intrinsic, SSP wafer Si FZ (100) dia 4’’ x 525µm intrinsic R > 20,000 ohm.cm one side polished with SEMI Std flats Roughness<0.5nm For more information, send us email at [email protected] and [email protected]

2021-03-17meta-author
2″ Silicon Wafer-1

PAM XIAMEN offers 2″ Silicon Wafer. Diameter (mm) Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 50.8 N Phos FZ (111) Off 2″ Towards (110) 2k-5k 350-400 P/E PRIME 50.8 N Phos CZ -100 1-20 10-30 P/P PRIME 50.8 N Phos CZ -100 1-20 40-60 P/P PRIME 50.8 N Phos CZ -100 1-20 80-100 P/P PRIME 50.8 N Phos CZ -100 1-20 140-160 P/P PRIME 50.8 N Phos FZ -100 >1000 200-500 P/E PRIME 50.8 N Phos FZ -100 >1000 200-500 P/P PRIME 50.8 N Phos CZ -100 225-275 P/P PRIME 50.8 N Phos FZ -100 >3000 225-275 P/P PRIME 50.8 N As CZ -100 .001-.005 250-300 P/E PRIME 50.8 N Sb CZ -100 .005-.02 250-300 P/P PRIME 50.8 N Phos FZ -100 >3000 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/DTOx PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/Ni PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/WTOx 50.8 N Phos FZ -100 2000-5000 275-325 P/P PRIME 50.8 N Phos CZ -100 450-500 P/P PRIME 50.8 N Phos CZ -100 43485 500-550 P/E PRIME 50.8 N Phos CZ -100 1000-1050 P/E PRIME 50.8 N Phos CZ -100 1-20 2900-3100 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]

2019-02-27meta-author
Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications

Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more [...]

2014-04-14meta-author
SIO2 SILICA QUARTZ SINGLE CRYSTAL

PAM XIAMEN offers SiO2 Silica Quartz Single Crystal. Major capability parameter Growth method hydro-thermal method Crystal Structure M6 Unit cell constant a=4.914Å    c=5.405 Å Melt point（℃） 1610℃ Density 2.684g/cm3 Hardness 7（mohs） Thermal conductivity 0.0033cal/cm℃ Planned constant 1200uv/℃（300℃） Index of refraction 1.544 Thermal expansion α11：13.71×10­6 / ℃ α33：7.48×10­6 /℃ Frequency constant 1661（kHz/mm） Crystal orientation Y、X or Z，30º~42.75 º ±5 Polishing Single or double  Ra<10Å Thickness 0.5mm±0.05mm TTV<5um Diameter Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm main positioning：22±1.5mm (Φ3″) 32±3.0 (Φ4″) Secondary positioning ：10mm±1.5mm For more information, please [...]

2019-03-15meta-author
4″ Prime Silicon Wafer

PAM XIAMEN offers 4″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×300±25µm, p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm, TTV<10µm, Bow<40µm, Warp<40µm, Both-sides-polished, SEMI Flats (two), Sealed in Empak cassette. Primary Flat: 32.5±-2.5, 110±1°。 Secondary Flat: 18±2，90°±5° For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-07-02meta-author