PAM XIAMEN offers GaN on Si for Power, D-mode.
1.1 D-MODE GaN HEMT Structure on Silicon
|Wafer size||2″, 4″, 6″,8″|
|AlGaN/GaN HEMT structure||Refer 1.2|
|Carrier density||>9E12 cm2|
|AFM RMS (nm）of 5x5um2||<0.25nm|
|SiN passivation layer||0~5nm|
|u-GaN cap layer||2nm|
|AlGaN barrier layer||/|
|Substrate material||Silicon substrate|
|Si wafer thickness (μm)||675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)|
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.