GaN on Si for Power, D-mode

PAM XIAMEN offers GaN on Si for Power, D-mode.

1.1 D-MODE GaN HEMT Structure on Silicon

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Carrier density >9E12 cm2
Hall mobility /
Sheet Resistivity /
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion  <5mm
SiN passivation layer  0~5nm
u-GaN cap layer  2nm
Al composition 20-30%
AlGaN barrier layer  /
GaN channel /
AlGaN buffer /
AlN /
Substrate material Silicon substrate
Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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