GaN on Si for Power, D-mode

PAM XIAMEN offers GaN on Si for Power, D-mode.

1.1 D-MODE GaN HEMT Structure on Silicon

Wafer size 2″, 4″, 6″,8″
AlGaN/GaN HEMT structure Refer 1.2
Carrier density >9E12 cm2
Hall mobility /
Sheet Resistivity /
AFM RMS (nm)of 5x5um2 <0.25nm
Bow(um) <=30um
Edge exclusion <5mm
SiN passivation layer 0~5nm
u-GaN cap layer 2nm
Al composition 20-30%
AlGaN barrier layer /
GaN channel /
AlGaN buffer /
AlN /
Substrate material Silicon substrate
Si wafer thickness (μm) 675um(2″), 1000um(4″), 1300um(6″), 1500um(8″)

 

1.2 AlGaN/GaN HEMT structure

 

 

 

 

 

 

 

 

 

 

 

For more information, please visit our website: https://www.powerwaywafer.com 
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

 

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