GaN whitepaper

GaN whitepaper

Advantech Wireless releases GaN whitepaper

The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication
Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based Solid State Power Amplifiers for Satellite Communication”.

The paper explores the technology and benefits of incorporating GaN into a line of high power amplifiers.

Energy efficiency and going “Green” is very important throughout the world. The Advantech Wireless whitepaper identifies and explains how it is possible to achieve significant reductions in energy consumption, space and weight while maintaining linearity and significant output power.

The introduction of GaN High Electron Mobility Transistors (HEMT) in early 2000 has left an undeniable mark on the entire satellite communication landscape.

“It is now possible for the first time since the introduction of the Solid State Microwave Technology to design and manufacture Power Amplifiers that exceed by several orders of magnitude the reliability, linearity, power density and energy efficiency of all existing technologies, being GaAs, LDMOS, or TWT” states Cristi Damian, VP Product Line Management and Business Development at Advantech Wireless.

Over the past 6 years, Advantech Wireless has developed a full line of GaN based SSPAs and BUCs/SSPBs (Block Up Converter integrated with SSPA). The product line was launched at Satellite 2010 in Washington, included up to 200W Ku-band offering, the first product line worldwide.

Since then, major deployments in both the commercial and military markets have been taken place with thousands of devices now operating in the field. GaN is a mature, stable and high reliability technology with low OPEX.

By using patent pending technologies and in close cooperation with key technology suppliers, Advantech Wireless says it has managed to perfect the design, and raise the performance of GaN based SSPA/SSPB above all existing technologies.
Source: compound semiconductor

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