SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
2022-09-06meta-author
Silicon carbide has a variety of crystal types, but the silicon crystal structure the market needed is mainly 4H-SiC. So the silicon carbide crystal growth in crystal types is a defect. To a certain extent, it can be distinguished by the naked eye. A more accurate measurement method for testing [...]
2021-04-27meta-author
The photoluminescent germanium nanocrystals (Ge-NCs) were successfully incorporated into electrospun polymeric nanofiber matrix in order to develop photoluminescent nanofibrous composite web. In the first step, the synthesis of Ge-NCs was achieved by nanosecond pulsed laser ablation of bulk germanium wafer immersed in organic liquid. The size, [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Multisite microLED optrode array for neural interfacing
Published by:
Niall McAlinden; Yunzhou Cheng; Robert Scharf; Enyuan Xie; Erdan Gu; Christopher F. Reiche; [...]
2019-12-09meta-author
The Silicon on Lattice Engineered Substrate (SOLES) platform enables monolithic integration of III-V compound semiconductor (III-V) and silicon (Si) complementary metal oxide semiconductor (CMOS) devices. The SOLES wafer provides a device quality Si-on-Insulator (SOI) layer for CMOS device fabrication and an embedded III-V device [...]
2020-01-13meta-author
PAM XIAMEN offers GaN LED epiwafer, which is grown on a patterned sapphire substrate (Al2O3) heated to an appropriate temperature, the gaseous substance InGaAIP is transported to the surface of the substrate in a controlled manner, and a specific single crystal film is grown. At [...]
2019-03-15meta-author
