(10-11) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN(10-11)-U
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	(10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type	N-type / Undoped
Resistivity (300K)	< 0.1 Ω·cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤ 5 x 10⁶cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

LD Bare Bar for 808nm@cavity 2mm

PAM XIAMEN offers LD Bare Bar for 808nm@cavity 2mm. Brand: PAM-XIAMEN Wavelength: 808nm Filling Factor: 38% Output Power: 100W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author

6″FZ Prime Silicon Wafer-2

PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2 6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (111) 3 Conductivity Type n 4 Dopant Phosphorus. 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 5000 – 10,000 Wcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, DSP 11 Edge [...]

2020-04-17meta-author

4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm

PAM XIAMEN offers 4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 100 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , resistivity ? Ohm cm (no matter), Particle: 0.33µm, <qty30 ttv ≤ 10um，warp ≤30um One side sputtering Cr/Au Layer with the thickness 10nm/50nm For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2021-03-16meta-author

Differential Magnetoresistive Sensor

Differential magnetoresistive sensor for sale from PAM-XIAMEN is one of magnetoresistive sensors, which is packaged by indium antimonide (InSb) thin film magnetoresistor plus bias magnet with a metal shell. As a result, the output signal is a quasi-sine wave signal. The specification of differential magnetoresistive (MR) [...]

2021-08-03meta-author

Indium Arsenide Ingot with Zinc Blende Structure Grown By VGF

PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]

2021-06-23meta-author

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry SLOW RAMP-UP BUT HUGE EXPECTATIONS The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling [...]

2012-07-11meta-author GaN Power Electronics

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

(10-11) Plane U-GaN Freestanding GaN Substrate

(10-11) Plane U-GaN Freestanding GaN Substrate

Share this post

Related Posts

LD Bare Bar for 808nm@cavity 2mm

6″FZ Prime Silicon Wafer-2

4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm

Differential Magnetoresistive Sensor

Indium Arsenide Ingot with Zinc Blende Structure Grown By VGF

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers