PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
V-shaped defects in InGaN/GaN multiquantum wells
InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110).
2″ Diameter Wafer
2″ wafers(110)
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm
Ge Wafer (110)N [...]
2019-04-25meta-author
PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.
General Properties for Tungsten
Symbol W
Atomic Number 74
Atomic Weight: 183.84
Crystal structure: BCC
Lattice constant at room temperature: 0.316 nm
Density: 19.25 g/cm3
Melting Point: 3422 °C
Boiling Point: 5555 °C
Tungsten (W) Polycrystalline Substrate: [...]
2019-05-20meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
20
n- Si:P
7±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±0.4
N/N/N+
4″Øx380μm
n- Si:As[111]
0.001-0.005
P/EOx
21
n- Si:P
150 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
22.5
n- Si:P
12±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28.5
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
26
n- Si:P
18±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
11
n- Si:P
2±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27
n- Si:P
220 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
27.5
n- Si:P
>250
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
28
n- Si:P
165 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
43688
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
9-11
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
28
n- Si:P
11±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
8-12
n- Si:P
43468
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
30
n- Si:P
11±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
4±10%
N/N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
5
n- Si:P
1.5±10%
N/N/N/N+
4″Øx525μm
n- [...]
2019-03-08meta-author
Reliability analysis of InGaN Blu-Ray laser diode
The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while [...]
2014-03-03meta-author
InGaN