(10-11) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (10-11) Plane U-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN(10-11)-U
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	(10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type	N-type / Undoped
Resistivity (300K)	< 0.1 Ω·cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤ 5 x 10⁶cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

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Germanium Can Take Transistors Where Silicon Can’t

Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs Germanium was first [...]

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Charge Sensitive Pre-amplifier

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[email protected] [email protected]

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(10-11) Plane U-GaN Freestanding GaN Substrate

(10-11) Plane U-GaN Freestanding GaN Substrate

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