PAM XIAMEN offers LD Bare Bar for 808nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 808nm
Filling Factor: 38%
Output Power: 100W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2
6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(111)
3
Conductivity Type
n
4
Dopant
Phosphorus.
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
5000 – 10,000 Wcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, DSP
11
Edge [...]
2020-04-17meta-author
PAM XIAMEN offers 4″ Prime CZ Si wafer with one side sputtering Cr/Au layer thickness 10/50nm
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm),
thickness = 100 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
resistivity ? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One side sputtering Cr/Au Layer with the thickness 10nm/50nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16meta-author
Differential magnetoresistive sensor for sale from PAM-XIAMEN is one of magnetoresistive sensors, which is packaged by indium antimonide (InSb) thin film magnetoresistor plus bias magnet with a metal shell. As a result, the output signal is a quasi-sine wave signal. The specification of differential magnetoresistive (MR) [...]
2021-08-03meta-author
PAM-XIAMEN provides indium arsenide (InAs) ingot with high quality and competitive price. Indium arsenide is a group III-V compound semiconductor material composed of indium and arsenic. It is a silver-gray solid at room temperature, and the indium arsenide crystal structure is a zinc blende crystal [...]
2021-06-23meta-author
GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry
SLOW RAMP-UP BUT HUGE EXPECTATIONS
The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling [...]