PAM XIAMEN offers 6″ FZ Silicon Wafer Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: ≤10@≥0.3μm, MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched, Tarnish, orange peel, contamination, haze, micro scratch, chips, edge chips, crack, crow feet, pin hole, pits, dent, waviness, smudge&scar on [...]
2019-09-03meta-author
Phonon Properties of SiC Wafer Nanyang Technological University use our SiC wafer to research Phonon Properties. They research focused on the phonon properties of crystal. Different crystal structures have slight different phonon For more details, please refer to below publications: https://www.nature.com/articles/s41467-018-04168-x https://www.nature.com/articles/s41467-020-15767-y Resonant nanostructures for highly confined and ultra-sensitive [...]
2020-09-21meta-author
PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-21)-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 106 Ω.cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers Graphene film on Ni/SiO2/Si. Graphene is an allotrope of carbon, whose structure is one-atom-thick planar sheets of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. The term graphene was coined as a combination of graphite and the [...]
2019-05-06meta-author
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60 8 SSP Boron P 100 0,0 ± 0,0 011 ± 1 3.5 – 7.0 Ohmcm 200 ± [...]
2019-02-25meta-author
