Photonics Epitaxial Wafers

Photonics Epitaxial Wafers

With the continuous evolution of optical telecommunication and opto-electronics device applications towards high speed and high performance, we are closely following market demand in photonics epitaxial wafers for high-speed and high-end optoelectronic applications. PAM-XIAMEN can provide a series of compound semiconductor based photonics epitaxial wafers, which can be used as key optoelectronic chip materials for applications such as broadband network infrastructure construction in fiber-optic communications, data communications, and 3D sensing and etc. The specific parameters are as follows:

photonics epitaxial wafers

1. Fiber-Optic Communication Epitaxial Wafer

According to their different functions, photonics epi wafer for optical communications can be divided into laser epiwafers, detector epiwafers, etc.

1.1 Epitaxial Wafers for Laser

Semiconductor laser wafers supplied include Distributed Feedback Laser (DFB), Electroabsorption-modulated Laser (EML), and Fabry Perot (FP), with wavelengths ranging from 1270nm to 1610nm. Additional information as:


Item Parameters

DFB Epitaxial Wafer EML Epitaxial Wafer FP Epitaxial Wafer
Diameter 2inch, 3inch
Wavelength 1270nm, 1310nm, 1490nm, 1550nm 1310nm, 1550nm, 1577nm 1310nm, 1550nm
Rate 2.5G/10G/25G 10G/25G/56G 2.5G/10G/25G
Characteristics ·GPON, XGPON, XGSPON, BIDI

·Grating technology

·Small divergence angle

SAG (Selective Regional Growth) and Butt joint technology Small divergence angle


These photonics epitaxial wafers can be used in GPON (Gigabit capability Passive Optical Network), XGPON(10 Gigabit capable Passive Optical Network), XGSPON (10 Gigabit Symmetrical Passive Optical Network), and FTTR (Fiber to the Room), CWDM/DWDM (Coarse Wavelength Division Multiplexing/Dense Wavelength Division Multiplexing), BIDI (Bi Directional) and other fiber-optic communications.

The DFB epitaxial wafers are grown with AlGaInAs and InGaAsP multiple quantum wells. Grating technology includes holographic gratings, nanoimprinting, and electron beam exposure, which can well meet the different products’ requirements. The EML epitaxial wafer integrates a DFB laser and an electrically modulated absorption region, which has the characteristics of high bandwidth, low chirp, high modulation extinction ratio, and compact structure. The electrically modulated absorption region adopts SAG and butt joint growth technologies. In addition, PAM-XIAMEN also offers solutions for small divergence angle DFB epitaxial wafer, buried heterojunction (BH) DFB epitaxial growth, docking passive waveguide epitaxial growth , and semi insulating confinement (InP: Fe) epitaxial wafer to meet the demands of high-speed chip fabrication.

1.2 Epitaxial Wafers for Detector

Semiconductor photonics epitaxial wafers we supplied are for MicroPulse DIAL (MPD),  Avalanche Photodiode (APD), and PIN covering wavelengths ranging from 650nm to 1700nm. They are suitable for optical communications such as GPON, XGPON, and XGSPON. The specific parameters are as follows:

Item Parameters MPD Epitaxial Wafer APD Epitaxial Wafer PIN Epitaxial Wafer
Diameter 2inch, 3inch, 4inch
Rate 2.5G/10G/25G 2.5G/10G/25G/50G
Characteristics Zn diffusion Zn diffusion Low dark current


The working principle of PD is that the PN junction of the photodetector forms an internal electric field; Then, light injection into semiconductors generates electron hole pairs, and under the action of an electric field, the PN junction generates directional photocurrent; Photocurrent is exported as output signal. Photodetectors commonly require epiwafers with high sensitivity, high response rate, low dark current, and high reliability. To amplify the received photocurrent and improve detection sensitivity, the APD with avalanche multiplication effect is used. We have been providing stable mass production of photodetector products for many years and can provide zinc diffusion services for you.

2. Data Center Epitaxial Wafer

The epi structures for data center are mainly grown on GaAs and InP substrate:

2.1 InP Epitaxial Wafer

The epitaxial wafers grown on InP substrates mainly consist of edge emitting DFB, EML lasers, and silicon photonics epitaxy, with speeds exceeding 25Gb/s and wavelengths of 1270nm, 1310nm, 1330nm, etc., which can meet the transmission requirements of 100G/400G/800G optical module. The specific parameters as below:

Item Parameters DFB Epitaxial Wafer High Power DFB Epitaxial Wafer Silicon photonics epitaxial wafer
Diameter 2inch, 3inch
Wavelength 1310nm 1310nm 1310nm
Rate 10G/25G/50G
Characteristics CWDM 4/PAM 4 BH technology PQ /AlQ DFB


2.2 GaAs Epitaxial Wafer

The GaAs based epitaxial wafers we grown are mainly vertical cavity surface emitting lasers (VCSELs) and GaAs PDs, which has a wavelength of 850nm and a modulation rate greater than 50Gb/s. The photonic applications epitaxial growth can meet the demands of short distance data transmission in data centers. More please see:

Item Parameters VCSEL Epitaxial Wafer GaAs PD Epitaxial Wafer
Diameter 4inch, 6inch 3inch, 4inch, 6inch
Wavelength 850nm
Rate 25G/50G 10G/25G/50G


3. Photonics Epitaxial Wafers for Sensing

The epi photonics wafers supplied for industrial or sensing applications mainly are GaAs based 905/940nm VCSEL lasers and 650-980nm FP lasers. More information please refer to the table below:

Item Parameters Pump Laser Wafer 3D Sensing Wafer Gas Sensing Wafer others
Diameter 3inch, 4inch, 6inch 4inch, 6inch 2inch, 3inch 3inch, 4inch
Wavelength 7xx~9xx nm 905nm/940 nm 1392nm/1580nm/1653nm 6xx nm/810nm
Power >30W 2W-80W 10mW-500mW


The reflector of VCSEL laser is grown with alternating stack of two materials of different refractive indices for hundreds of layers, known as Bragg reflector (DBR). The resonant cavity is fabricated in the middle of the epitaxial layers, and the light is emitted from the surface of the photonic wafer. Thus, VCSEL is fabricated with the features of a small emission angle, circular spot, low threshold, and can be integrated into an array, widely used in mobile 3D sensing facial recognition, industrial robots, autonomous driving LiDAR for automobiles, etc. Edge emitting GaAs based FP lasers are mainly used in applications, such as laser display (650 FP), laser hair removal (810 FP), automotive lidar (905 FP) and fiber laser pump source (808/915/976 FP).

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