With the continuous evolution of optical telecommunication and opto-electronics device applications towards high speed and high performance, we are closely following market demand in photonics epitaxial wafers for high-speed and high-end optoelectronic applications. PAM-XIAMEN can provide a series of compound semiconductor based photonics epitaxial wafers, which can be used as key optoelectronic chip materials for applications such as broadband network infrastructure construction in fiber-optic communications, data communications, and 3D sensing and etc. The specific parameters are as follows:

1. Fiber-Optic Communication Epitaxial Wafer

According to their different functions, photonics epi wafer for optical communications can be divided into laser epiwafers, detector epiwafers, etc.

1.1 Epitaxial Wafers for Laser

Semiconductor laser wafers supplied include Distributed Feedback Laser (DFB), Electroabsorption-modulated Laser (EML), and Fabry Perot (FP), with wavelengths ranging from 1270nm to 1610nm. Additional information as:

These photonics epitaxial wafers can be used in GPON (Gigabit capability Passive Optical Network), XGPON(10 Gigabit capable Passive Optical Network), XGSPON (10 Gigabit Symmetrical Passive Optical Network), and FTTR (Fiber to the Room), CWDM/DWDM (Coarse Wavelength Division Multiplexing/Dense Wavelength Division Multiplexing), BIDI (Bi Directional) and other fiber-optic communications.

The DFB epitaxial wafers are grown with AlGaInAs and InGaAsP multiple quantum wells. Grating technology includes holographic gratings, nanoimprinting, and electron beam exposure, which can well meet the different products’ requirements. The EML epitaxial wafer integrates a DFB laser and an electrically modulated absorption region, which has the characteristics of high bandwidth, low chirp, high modulation extinction ratio, and compact structure. The electrically modulated absorption region adopts SAG and butt joint growth technologies. In addition, PAM-XIAMEN also offers solutions for small divergence angle DFB epitaxial wafer, buried heterojunction (BH) DFB epitaxial growth, docking passive waveguide epitaxial growth , and semi insulating confinement (InP: Fe) epitaxial wafer to meet the demands of high-speed chip fabrication.

1.2 Epitaxial Wafers for Detector

Semiconductor photonics epitaxial wafers we supplied are for MicroPulse DIAL (MPD),  Avalanche Photodiode (APD), and PIN covering wavelengths ranging from 650nm to 1700nm. They are suitable for optical communications such as GPON, XGPON, and XGSPON. The specific parameters are as follows:

The working principle of PD is that the PN junction of the photodetector forms an internal electric field; Then, light injection into semiconductors generates electron hole pairs, and under the action of an electric field, the PN junction generates directional photocurrent; Photocurrent is exported as output signal. Photodetectors commonly require epiwafers with high sensitivity, high response rate, low dark current, and high reliability. To amplify the received photocurrent and improve detection sensitivity, the APD with avalanche multiplication effect is used. We have been providing stable mass production of photodetector products for many years and can provide zinc diffusion services for you.

2. Data Center Epitaxial Wafer

The epi structures for data center are mainly grown on GaAs and InP substrate:

2.1 InP Epitaxial Wafer

The epitaxial wafers grown on InP substrates mainly consist of edge emitting DFB, EML lasers, and silicon photonics epitaxy, with speeds exceeding 25Gb/s and wavelengths of 1270nm, 1310nm, 1330nm, etc., which can meet the transmission requirements of 100G/400G/800G optical module. The specific parameters as below:

2.2 GaAs Epitaxial Wafer

The GaAs based epitaxial wafers we grown are mainly vertical cavity surface emitting lasers (VCSELs) and GaAs PDs, which has a wavelength of 850nm and a modulation rate greater than 50Gb/s. The photonic applications epitaxial growth can meet the demands of short distance data transmission in data centers. More please see:

3. Photonics Epitaxial Wafers for Sensing

The epi photonics wafers supplied for industrial or sensing applications mainly are GaAs based 905/940nm VCSEL lasers and 650-980nm FP lasers. More information please refer to the table below:

The reflector of VCSEL laser is grown with alternating stack of two materials of different refractive indices for hundreds of layers, known as Bragg reflector (DBR). The resonant cavity is fabricated in the middle of the epitaxial layers, and the light is emitted from the surface of the photonic wafer. Thus, VCSEL is fabricated with the features of a small emission angle, circular spot, low threshold, and can be integrated into an array, widely used in mobile 3D sensing facial recognition, industrial robots, autonomous driving LiDAR for automobiles, etc. Edge emitting GaAs based FP lasers are mainly used in applications, such as laser display (650 FP), laser hair removal (810 FP), automotive lidar (905 FP) and fiber laser pump source (808/915/976 FP).

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.