Growth and characteristics of p-type doped GaAs nanowire

The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 10¹⁹–10²⁰cm⁻³.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

2020-02-11

4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm

PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm. 1. Specification of Prime Silicon Wafer by FZ PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE [...]

2019-07-04meta-author

Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm Specifications Au/Ti/SiO2/Si substrate: 1.Structure: Au/Ti/ SiO2 on Si substrate Flim thickness: Au(111)=50 nm Ti=2 nm SiO2=300 nm 2.Substrate spec: Material:Si substrate Size: 4″ dia. Orientation:(100) Type:P type Dopant:B doped Thickness:525 um Grade: [...]

2019-04-26meta-author

CeO2 Epi-thin film on YSZ Alloy

PAM XIAMEN offers CeO2 Epi-thin film on YSZ Alloy. CeO2 Film (40 nm one side) on YSZ <100> 10x10x0.5 mm CeO2 Film (40 nm one side) on YSZ <110> 10x10x0.5 mm. CeO2 Film (40 nm one side) on YSZ, <111>10x10x0.5 mm, 1sp For more [...]

2019-04-26meta-author

8″ FZ Prime Silicon Wafer

PAM XIAMEN offers 8″ FZ Prime Silicon Wafer. 1. Specification of 8″ FZ Prime Silicon Wafer 8″ 200+/-0.2 mm Double Side Polished Prime FZ N type resistivity 8000-14000Ωcm orientation 100 ±0.5° Thickness 625 +/- 5µm Laser Mark None or SEMI edge profile SEMI Notch SEMI [...]

2019-06-28meta-author

PAM-XIAMEN Offers GaAs Epi with AlAs layer on GaAs substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs Epi wafer and other related products and services announced the new availability of size 2″-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, [...]

2017-06-29meta-author

Why can LED wafer on PSS be Used in Laser Liftoff?

Some customers worry about that when they transfer LED onto other substrates using laser liftoff, these patterns of LED wafer on patterned sapphire substrate. PSS will scatter the laser. In fact, some of our customers also use 4” epi wafers on PSS for LLO, [...]

2021-03-22meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Growth and characteristics of p-type doped GaAs nanowire

Growth and characteristics of p-type doped GaAs nanowire

Share this post

Related Posts

4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm

Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate

CeO2 Epi-thin film on YSZ Alloy

8″ FZ Prime Silicon Wafer

PAM-XIAMEN Offers GaAs Epi with AlAs layer on GaAs substrate

Why can LED wafer on PSS be Used in Laser Liftoff?

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers