PAM XIAMEN offers 4″CZ Prime Silicon Wafer-13
4″ CZ wafer, P type
Orientation: (100)±0.5
Type/Dopant; P/Boron
Resistivity: 1-5 Ω-cm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
Diameter: 100 mm
For more information, send us email at [email protected] and [email protected]
2020-04-24meta-author
PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.
Main Parameters
Crystal structure
face centered cubic, M3 a = 6.291 Å
Growth method
crystallization process
Density
1.98(g/cm3)
Melting point
770 °C
Refractive index
1.49025 (at 589 nm)
T
0.91
Nf
0.01114
Surface roughness
<10 nm due to hygroscopic [...]
2019-03-12meta-author
PAM-H01 series are CZT crystal based hemispherical detectors which have a special structure. They can detect X-ray and middle to high energy γ-ray in a high energy resolution.
CZT Asymmetry Detector
1. CZT Hemispherical Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistance
>1010Ω.cm
Dimensions
5.5×5.0mm2
10.0×10.0mm2
Thickness
2.75mm
5.0mm
Electrode material
Au
Operation temperature
-20℃-+40℃
Energy range
10KeV~3MeV
Energy resolution(22℃)
<3%@662MeV
Peak-compton ratio
>3
>5
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Remarks
Customized available
2. CZT Crystal [...]
2019-04-24meta-author
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author
Wide Bandgap Technology –Next Generation Power Devices
The tightening of industry standards and changes in government regulations are key drivers of higher energy efficiency. For example, data centers are growing exponentially to meet demand. They use about 3% of the world’s total electricity supply (400 [...]
2018-08-30meta-author
The technical potential of room temperature bonding of wafers in vacuum using amorphous Si (a-Si) and Ge (a-Ge) films was studied. Transmission electron microscopy images revealed no interface corresponding to the original films surfaces for bonded a–Ge–a–Ge films. Analyses of film structure and the [...]
2019-12-09meta-author