100mm N type GaN substrate

100mm N type GaN substrate

100mm N type GaN substrate

PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:

4″(100mm) Undoped Free-standing GaN Substrate

ItemPAM-FS-GaN100-U
Conduction TypeUndoped
Size4″(100)+/-1mm
Thickness350-450um
OrientationC-axis(0001)+/-0.5°
Primary Flat Location(1-100)+/-0.5°
Primary Flat Length
Secondary Flat Location(11-20)+/-3°
Secondary Flat Length
Resistivity(300K)<0.5Ω·cm
Dislocation Density<5×10^6cm-2
FWHM
TTV<=35um
BOW<=50um
Surface FinishFront Surface:Ra<0.2nm.Epi-ready polished
 Back Surface:1.Fine ground
2.Rough grinded
Usable Area≥ 90 %

 

4″(100mm) N-doped Free-standing GaN Substrate

ItemPAM-FS-GaN100-N
Conduction TypeN-type/Si doped
Size4″(100)+/-1mm
Thickness350-450um
OrientationC-axis(0001)+/-0.5°
Primary Flat Location(1-100)+/-0.5°
Primary Flat Length
Secondary Flat Location(11-20)+/-3°
Secondary Flat Length
Resistivity(300K)<0.05Ω·cm
Dislocation Density<5×10^6cm-2
FWHM
TTV<=35um
BOW<=50um
Surface FinishFront Surface:Ra<0.2nm.Epi-ready polished
 Back Surface:1.Fine ground
2.Rough grinded
Usable Area≥ 90 %

 

For more information, please visit:https://www.powerwaywafer.com/gan-wafer/gan-substrate.html  and send us email at [email protected]

 

Share this post