100mm N type GaN substrate

100mm N type GaN substrate

PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:

4″(100mm) Undoped Free-standing GaN Substrate

Item	PAM-FS-GaN100-U
Conduction Type	Undoped
Size	4″(100)+/-1mm
Thickness	350-450um
Orientation	C-axis(0001)+/-0.5°
Primary Flat Location	(1-100)+/-0.5°
Primary Flat Length	–
Secondary Flat Location	(11-20)+/-3°
Secondary Flat Length	–
Resistivity(300K)	<0.5Ω·cm
Dislocation Density	<5×10^6cm-2
FWHM	–
TTV	<=35um
BOW	<=50um
Surface Finish	Front Surface:Ra<0.2nm.Epi-ready polished
	Back Surface:1.Fine ground 2.Rough grinded
Usable Area	≥ 90 %

4″(100mm) N-doped Free-standing GaN Substrate

Item	PAM-FS-GaN100-N
Conduction Type	N-type/Si doped
Size	4″(100)+/-1mm
Thickness	350-450um
Orientation	C-axis(0001)+/-0.5°
Primary Flat Location	(1-100)+/-0.5°
Primary Flat Length	–
Secondary Flat Location	(11-20)+/-3°
Secondary Flat Length	–
Resistivity(300K)	<0.05Ω·cm
Dislocation Density	<5×10^6cm-2
FWHM	–
TTV	<=35um
BOW	<=50um
Surface Finish	Front Surface:Ra<0.2nm.Epi-ready polished
	Back Surface:1.Fine ground 2.Rough grinded
Usable Area	≥ 90 %

For more information, please visit:https://www.powerwaywafer.com/gan-wafer/gan-substrate.html and send us email at [email protected]

2020-03-25

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