100mm N type GaN substrate

100mm N type GaN substrate

PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:

4″(100mm) Undoped Free-standing GaN Substrate

Item PAM-FS-GaN100-U
Conduction Type Undoped
Size 4″(100)+/-1mm
Thickness 350-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length –
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length –
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×10^6cm-2
FWHM –
TTV <=35um
BOW <=50um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

 

4″(100mm) N-doped Free-standing GaN Substrate

Item PAM-FS-GaN100-N
Conduction Type N-type/Si doped
Size 4″(100)+/-1mm
Thickness 350-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length –
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length –
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5×10^6cm-2
FWHM –
TTV <=35um
BOW <=50um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

 

For more information, please visit:https://www.powerwaywafer.com/gan-wafer/gan-substrate.html  and send us email at victorchan@powerwaywafer.com

 

2020-03-25

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