100mm N type GaN substrate

100mm N type GaN substrate

PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:

1. N Type GaN Substrate Datasheet

1.1 4″(100mm) Undoped Free-standing GaN Substrate

Item PAM-FS-GaN100-U
Conduction Type Undoped
Size 4″(100)+/-1mm
Thickness 350-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×10^6cm-2
FWHM
TTV <=35um
BOW <=50um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

 

1.2 4″(100mm) N-doped Free-standing GaN Substrate

Item PAM-FS-GaN100-N
Conduction Type N-type/Si doped
Size 4″(100)+/-1mm
Thickness 350-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5×10^6cm-2
FWHM
TTV <=35um
BOW <=50um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

2. FAQ about Free Standing GaN Substrate

Q: I have a question about your free standing GaN substrate. The RMS on Ga polar is around 2nm. What’s the AFM scan size of the RMS value? Or can you provide me with AFM images?

And the substrate is double side polished. Is it possible to make it only polished on the Ga polar side?

What’s your growth method for the free standing substrates (ex. HVPE)?

A:1/see attached AFM.

AFM-Picture-freestanding n type GaN substrate

2/double side polished and single side polished are both available, you can only require single side polished.

3/Growth method: HVPE

For more information, please contact us email at [email protected] and [email protected].

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