100mm N type GaN substrate
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:
4″(100mm) Undoped Free-standing GaN Substrate
| Item | PAM-FS-GaN100-U |
| Conduction Type | Undoped |
| Size | 4″(100)+/-1mm |
| Thickness | 350-450um |
| Orientation | C-axis(0001)+/-0.5° |
| Primary Flat Location | (1-100)+/-0.5° |
| Primary Flat Length | – |
| Secondary Flat Location | (11-20)+/-3° |
| Secondary Flat Length | – |
| Resistivity(300K) | <0.5Ω·cm |
| Dislocation Density | <5×10^6cm-2 |
| FWHM | – |
| TTV | <=35um |
| BOW | <=50um |
| Surface Finish | Front Surface:Ra<0.2nm.Epi-ready polished |
| Back Surface:1.Fine ground 2.Rough grinded |
|
| Usable Area | ≥ 90 % |
4″(100mm) N-doped Free-standing GaN Substrate
| Item | PAM-FS-GaN100-N |
| Conduction Type | N-type/Si doped |
| Size | 4″(100)+/-1mm |
| Thickness | 350-450um |
| Orientation | C-axis(0001)+/-0.5° |
| Primary Flat Location | (1-100)+/-0.5° |
| Primary Flat Length | – |
| Secondary Flat Location | (11-20)+/-3° |
| Secondary Flat Length | – |
| Resistivity(300K) | <0.05Ω·cm |
| Dislocation Density | <5×10^6cm-2 |
| FWHM | – |
| TTV | <=35um |
| BOW | <=50um |
| Surface Finish | Front Surface:Ra<0.2nm.Epi-ready polished |
| Back Surface:1.Fine ground 2.Rough grinded |
|
| Usable Area | ≥ 90 % |
For more information, please visit:https://www.powerwaywafer.com/gan-wafer/gan-substrate.html and send us email at victorchan@powerwaywafer.com