100mm N type GaN substrate

100mm N type GaN substrate

PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:

4″(100mm) Undoped Free-standing GaN Substrate

Item PAM-FS-GaN100-U
Conduction Type Undoped
Size 4″(100)+/-1mm
Thickness 350-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length –
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length –
Resistivity(300K) <0.5Ω·cm
Dislocation Density <5×10^6cm-2
FWHM –
TTV <=35um
BOW <=50um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

 

4″(100mm) N-doped Free-standing GaN Substrate

Item PAM-FS-GaN100-N
Conduction Type N-type/Si doped
Size 4″(100)+/-1mm
Thickness 350-450um
Orientation C-axis(0001)+/-0.5°
Primary Flat Location (1-100)+/-0.5°
Primary Flat Length –
Secondary Flat Location (11-20)+/-3°
Secondary Flat Length –
Resistivity(300K) <0.05Ω·cm
Dislocation Density <5×10^6cm-2
FWHM –
TTV <=35um
BOW <=50um
Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished
  Back Surface:1.Fine ground
2.Rough grinded
Usable Area ≥ 90 %

 

For more information, please visit:https://www.powerwaywafer.com/gan-wafer/gan-substrate.html  and send us email at victorchan@powerwaywafer.com

 

2020-03-25

Share this post

Related Posts

Growth of CdZnTe crystals by the traveling heater method

Effects of mosaic structure on the physical properties of CdZnTe crystals   Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]

2013-09-23meta-author
Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands    of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,      Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance    for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of    Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC Published by: Subing Yang;Sakiko Tokunaga;Minako Kondo;Yuki Nakagawa;Tamaki Shibayama; a Graduate School of [...]

2019-12-02meta-author
2″ Silicon Wafer-4

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 40mm 250 P/E 1-100 SEMI Prime, Soft cst p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 525 P/P 1-30 SEMI, p-type Si:B [100] 2″ 1000 P/P 1-10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 1-10 SEMI Prime p-type Si:B [100] 2″ 275 P/E 0.5-1.0 SEMI p-type Si:B [100] 2″ 3150 C/C >0.5 1Flat p-type Si:B [100] 2″ 280 P/P 0.4-0.6 SEMI Prime, p-type Si:B [100] 2″ 275 P/E 0.2-0.4 SEMI Prime, p-type Si:B [100] 2″ 279 P/P 0.08-0.12 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 0.015-0.020 Groups of [...]

2019-03-07meta-author
PAM-XIAMEN Offers 2” InGaAsN layer on GaAs substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaAsN wafer and other related products and services announced the new availability of size 2″  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.   Dr. Shaka, said, “We [...]

2017-07-11meta-author
Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]

2019-08-12meta-author
4″CZ Prime Silicon Wafer-8

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-8 Item5, 125pcs Silicon wafer: i. Diameter:100 mm ± 0.5 mm, ii. Thickness: 525μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ Grade: [...]

2020-03-27meta-author