Transform Infrared Spectroscopy (FTIR) Undoped Silicon

Transform Infrared Spectroscopy (FTIR) Undoped Silicon

PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
Below are the two specifications of our silicon items that are great for FTIR Spectroscopy:

1) Si 100mm low B or P doped <100>, 10,000 ohm-cm, 525um, DSP Prime

2) 150mm dia. <100> low B or P doped FZ Si DSP, >100 ohm-cm resist. thickness ~400-500um, Prime Grade (PAM201022-FZS)

Silicon shows promise to be the next-evolution anode material for lithium-ion batteries (LIBs). But Silicon electrodes exhibit significant capacity fade with cycling.

Researchers theorizes that the capacity loss is due to the solid electrolyte interphase (SEI) forming in the first cycle and becoming destabilized by large cyclic volume changes.

A client researcher used our item 3193 for the following cell for in situ attenuated total reflection-Fourier transform infrared spectroscopy with controllable penetration depth was used to study the chemistry at the electrode–electrolyte interface.

For more information, please contact us email at and

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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