The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
2020-03-17meta-author
Highlights •Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice. •Emphasis on understanding the inconclusive crystalline morphology at initial layers. •Observed low TD in HRTEM and low RMS in AFM. •Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD. •SAEDP shows fcc [...]
The behaviour of n-6H SiC in HF- and KOH-based electrolytes is studied. It is shown that at the room temperature the dissolution of SiC in these electrolytes is accompanied by a number of side effects, such as passivation of the etched surface with an [...]
2019-03-25meta-author
Today, among the existing semiconductor materials, diamond is one of the most promising semiconductor materials. Usually, it is used as diamond thermal management material. The article will mainly discuss the diamond from 3 parts: what is diamond, diamond material properties and its applications. 1. What Is Diamond? Diamond [...]
2021-04-30meta-author
PAM-XIAMEN is an expert of LED wafers, and we offer LED wafers (link: https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html) and technology support for you on LED fabrication by our rich experience. Here we share a method of laser for scribing LED wafers. Laser processing is to irradiate a laser [...]
2022-07-08meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-7 GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, One SEMI Flat Sealed in Empak or equivalent cassette, MCC Lifetime>1000µs For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author