3-11. Particles
Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
3-11. Particles
Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
2-8.Secondary Flat Orientation A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
5-6-4-1 SiC High-Power Rectifiers The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
2-5.Misorientation In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
3-6. Edge Chips Areas where material has been unintentionally removed from the wafer.Do not confuse fractures in epi crown with edge chips.
2-27.BOW Bow is the deviation of the center point of the median surface of a free, un-clamped wafer from the median surface to the reference plane. Where the reference plane is defined by three corners of equilateral triangle. This definition is based on now obsolete [...]
5-2-1-1 SiC Crystallography Silicon carbide occurs in many different crystal structures, called polytypes. Despite the fact that all SiC polytypes chemically consist of 50% carbon atoms covalently bonded with 50% silicon atoms, each SiC polytype has its own distinct set of electrical semiconductor properties. While [...]
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