3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
3-12. Silicon Droplets
Silicon droplets can appear as either small mounds or depressions in the wafer surface. Normally absent, but if present are largely concentrated at perimeter of wafer. If present, estimate the % of speci ed area affected.
2-18.Grain boundaries They are interfaces where crystals of different orientations meet. A grain boundary is a single-phase interface, with crystals on each side of the boundary being identical except in orientation. The term “crystallite boundary” is sometimes, though rarely, used. Grain boundary areas contain those [...]
5-5-1 Choice of Polytype for Devices As discussed in Section 4, 4H- and 6H-SiC are the far superior forms of semiconductor device quality SiC commercially available in mass-produced wafer form. Therefore, only 4H- and 6H-SiC device processing methods will be explicitly considered in the rest [...]
In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium. Refractive index is the basic property of optical crystals, and it is an important parameter [...]
5-4-3 Growth of Hexagonal Polytype SiC Wafers In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]
Total Thickness Variation (TTV): The maximum variation in the wafer thickness. Total Thickness Variation is generally determined by measuring the wafer in 5 locations of a cross pattern (not too close to the wafer edge) and calculating the maximum measured difference in thickness. The [...]
5-6-4 SiC High-Power Switching Devices The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers [...]
Cookie | Duration | Description |
---|---|---|
cookielawinfo-checkbox-analytics | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Analytics". |
cookielawinfo-checkbox-functional | 11 months | The cookie is set by GDPR cookie consent to record the user consent for the cookies in the category "Functional". |
cookielawinfo-checkbox-necessary | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookies is used to store the user consent for the cookies in the category "Necessary". |
cookielawinfo-checkbox-others | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Other. |
cookielawinfo-checkbox-performance | 11 months | This cookie is set by GDPR Cookie Consent plugin. The cookie is used to store the user consent for the cookies in the category "Performance". |
viewed_cookie_policy | 11 months | The cookie is set by the GDPR Cookie Consent plugin and is used to store whether or not user has consented to the use of cookies. It does not store any personal data. |