3-5. Backside Cleanliness
Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
3-5. Backside Cleanliness
Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.
5-3-1 High-Temperature Device Operation The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor device functionality at much higher temperatures than silicon . As discussed in basic semiconductor electronic [...]
2-19.Scratches A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
2-13.Hex Plate Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
2-27.BOW Bow is the deviation of the center point of the median surface of a free, un-clamped wafer from the median surface to the reference plane. Where the reference plane is defined by three corners of equilateral triangle. This definition is based on now obsolete [...]
5-1 Introduction Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety [...]
2-35.Prime Grade Prime Grade:The highest grade of a silicon carbide wafer. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Prime Wafers”.
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