2-19.Scratches
A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
2-19.Scratches
A scratch is dened as a singular cut or groove into the frontside wafer surface with a length-to-width ratio of greater than 5 to 1, and visible under hight intensity illumination.
5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable [...]
2-7.Primary Flat Orientation The at of the longest length on the wafer, oriented such that the chord is parallel with a specied low index crystal plane. Measured on one wafer per ingot using Laue back-reection technique with manual angle measurement.
2-14.Masking Defects also referred to as “Mound” When one defect prevents the detection of another defect, the undetected defect is called the masked defect. A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.
1-5.Thermal Expansion Coefficient Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. Materials which contract with increasing temperature are [...]
5-1 Introduction Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide’s ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety [...]
2-8.Secondary Flat Orientation A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.