PAM XIAMEN offers Single-emitter LD Chip 880nm @8W.
Brand: PAM-XIAMEN
Wavelength: 880nm
Stripe width: 150um
Output Power: 8W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-05-09meta-author
PAM XIAMEN offers Moissanite Raw Crystal Silicon Carbide.
High quality colorless raw Moissanite crystals (D-E-F color) from PAM XIAMEN are grown using advanced technologies. Gem grade Moissanite silicon carbide crystals are available in different sizes ranging from tens of grams to kilograms.
What is Moissanite?
In 1893, [...]
2019-03-14meta-author
PAM XIAMEN offers 150mm&200mm Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
150
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-550
P/P
PRIME
150
N
Phos
CZ
-100
1-100
500-600
P/E
TEST
150
N
Phos
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
N
Phos
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
N
Phos
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-550
P/P
PRIME
150
P
Boron
CZ
-100
1-100
500-600
P/E
TEST
150
P
Boron
CZ
-100
.001-.005
650-700
P/E
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/DTOx
PRIME
150
P
Boron
CZ
-100
1-100
650-700
P/E/Ni
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/OX
PRIME
150
P
Boron
CZ
-100
1-20
650-700
P/E/WTOx
150
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
150
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
Undoped
VGF
-100
>1E7
500-600
P/P
150
N
Si
VGF
-100
650-700
P/E
PRIME
150
P
Zn
VGF
-100
650-700
P/E
PRIME
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
500-600
P/P
TEST
150
Si
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
150
Si
Undoped
VGF
-100
>1E7
650-700
P/E
PRIME
150
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Round
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
150
Shipping Cassette
ePak
Holds25Wafers
Clean Room
200
N
Phos
CZ
-100
1-20
700-750
P/E/OX
PRIME
200
P
Boron
CZ
-100
1-100
600-800
P/E
TEST
200
P
Boron
CZ
-100
1-20
700-750
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]
2019-03-04meta-author
PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale.
1. Semi-insulating Freestanding GaN Substrate Specification
Item
PAM-FS-GAN(20-2-1)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front [...]
2020-09-02meta-author
Electronic lifetime engineering using low-temperature GaAs in a quantum well structure
Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm [...]
2014-01-27meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]