We specialize in providing antimonide wafers, like InSb wafer: https://www.powerwaywafer.com/compound-semiconductor/insb-wafer.html. In addition, we will offer technology support for you. Here we share a paper “New Process Results in Smoother Indium Antimonide Substrates”, which is about modified chemomechanical polishing of InSb wafer.
Reprinted from: spie.org
Published by:
Patrick [...]
2022-07-08meta-author
Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support [...]
2020-03-10meta-author
Size and distribution of Te inclusions in detector-grade CdZnTe ingots
To observe the Te inclusions distribution along the axial direction of CdZnTe ingots, batches of as-grown detector-grade CdZnTe crystals grown by vertical Bridgman method, were investigated using IR transmission imaging. However, there is not a [...]
PAM-XIAMEN offers (20-21) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(20-21)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω.cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One [...]
2019-09-20meta-author
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(10-11)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(10-11) plane off angle toward A-axis 0 ±0.5°
(10-11) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author