Electronic lifetime engineering using low-temperature GaAs in a quantum well structure

Electronic lifetime engineering using low-temperature GaAs in a quantum well structure

Using an AlAs barrier, it is possible to confine the defects associated to the low temperature grown GaAs in a well-defined portion of the sample. We verified that a minimum thickness of about 5 nm of AlAs is required. Structures with good quality QW and LT-GaAs QW have been grown where the separation between wells could be reduced to a minimum distance of 5 nm. This has been used to design quantum heterostructures where the extension of the electronic wave functions of the different levels over the LT-GaAs regions can be adjusted independently. This controlled overlap opens an alternative way to engineer the lifetime of various electronic subbands.

Source:Journal of Crystal Growth

If you need more information about Electronic lifetime engineering using low-temperature GaAs in a quantum well structure，please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or [email protected].

2014-01-27

Related Posts

ZnTe single crystal substrate

PAM XIAMEN offers ZnTe single crystal substrate. ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40 ZnTe, N type, (110) [...]

2019-05-21meta-author

Germanium Substrate for Optics and Epi-growth

Xiamen Powerway Advanced Material Co.,Ltd. offers monocrystal or polycrystalline150mm Germanium (100) or (111) substrates for optical application or for epi-growth in microelectronics. You can buy germanium substrate in following specifications: 1. Gemanium Substrate Specifications No.1 Optically Polished Germanium Substrates PAM211025-GE Sl No’ Specifications Value 1 Material Germanium (Ge) Optical grade 2 Crystalline form Polycrystalline / Monocrystalline 3 Shape Circular Flat 4 Diameter 25 mm [...]

2014-08-20meta-author gaas on ge substrate, ge ecl substrate, umicore ge substrates

Types and Uses of GaAs electronic devices

GaAs epi wafer for microelectronic and optoelectronic devices PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell. Electronic devices Material(layer/substrate) Application Technology Tends Material Required Digital IC (MESFETHEMT) GaAs/GaAs GaAlAs/GaAs Ultra-high-speed computers PC,ATM,Image Processing High level [...]

2019-03-15meta-author

X-ray response of polycrystalline – CdZnTe

X-ray response of polycrystalline – CdZnTe X-ray response of polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon [...]

2014-03-21meta-author CdZnTe

Properties of InGaN blue laser diodes grown on bulk GaN substrates

Properties of InGaN blue laser diodes grown on bulk GaN substrates High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]

2013-03-06meta-author GaN substrate

Studies on Silicon Carbide Epitaxial Technology

With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers. SiC usually adopts the PVT method with [...]

2021-02-25meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.