PAM XIAMEN offers ZnTe single crystal substrate.
ZnTe single crystal substrate, undoped, N type, (110) 10x10x 0.5mm, 2sp
ZnTe Random orientation , n type, 10x10x0.5 mm, 2sp
ZnTe single crystal substrate, undoped, P-type (100) 10x10x1.0mm, single side with scratch/dig 60/40
ZnTe, N type, (110) [...]
Xiamen Powerway Advanced Material Co.,Ltd. offers monocrystal or polycrystalline150mm Germanium (100) or (111) substrates for optical application or for epi-growth in microelectronics. You can buy germanium substrate in following specifications:
1. Gemanium Substrate Specifications
No.1 Optically Polished Germanium Substrates
Germanium (Ge) Optical grade
Polycrystalline / Monocrystalline
25 mm [...]
GaAs epi wafer for microelectronic and optoelectronic devices
PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell.
High level [...]
X-ray response of polycrystalline – CdZnTe
X-ray response of polycrystalline-CdZnTe deposited by thermal evaporation were measured by signal to noise(S/N) analysis. The CdZnTe material has optimal property adquem in solid state X-ray detector and many research presented on single crystal CdZnTe with small sized silicon [...]
Properties of InGaN blue laser diodes grown on bulk GaN substrates
High-pressure growth from solution is at present the only method able to provide true bulk GaN monocrystals. In this paper, we would like to demonstrate that in spite of their small, centimeter range size, [...]
With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]