PAM XIAMEN offers SiO2 +Si3N4 on Silicon wafer as follows
No.1: 300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped,Resistivity:0.01-0.1ohm.cm
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( Both [...]
2019-04-29meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy, Peking University, Shandong Univerity, university of south carolina, Caltech Faraon [...]
2022-06-14meta-author
Some news indicates that a high-tech company in a certain country has developed a new type of substrate material that matches the GaN lattice and can grow GaN well. (Note: It is very difficult to prepare GaN bulk single crystals, so the GaN mentioned [...]
2021-04-01meta-author
PAM XIAMEN offers Lithium Metal Foil.
Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D
Purity 99.9% Lithium
Melting Point 180.5 °C
Density 0.534 g/cm3
Color Silver
Dimension “16 mm x 0.6 mm
(diameter x thickness)”
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author
PAM XIAMEN offers La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3 .
20nmLa0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 films on Nb:SrTiO3 Substrate <100> 5x5x0.5 mm, 1sp ,wt 0.7%
Specifications:
Film: La0.7Sr0.3MnO3 (20nm) + PbZr0.2Ti0.8O3 (100nm)
Substrate:Nb: SrTiO3 (100), wt 0.7%
Size: 5x5x0.5mm, one side polished
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-04-28meta-author