PAM-XIAMEN offers GaN on SiC HEMT epitaxial wafer, which is HEMT stacks grown on semi insulation SiC for fabricating microwave RF devices, working on III-N material-growth and devices.
1. GaN on SiC HEMT Wafer for RF Application
No.1 GaN-on-SiC HEMT Epistructure
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
1300~2200 [...]
2019-05-17meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2434
p–type Si:B
[110] ±0.25°
4″
525
P/E
5–10
SEMI Prime, 2Flats, Empak cst
PAM2435
p–type Si:B
[110] ±0.5°
4″
380
P/P
1–30
SEMI Prime, Primary Flat @ [111]±0.25°, SFlat @ [111]±5° (109.5° CW from PFlat), Empak cst
PAM2436
p–type Si:B
[110] ±0.5°
4″
750
P/E
1–100
SEMI Prime (back–side [...]
2019-02-19meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches
Published by:
K. Haehre ; M. Meisser ; F. Denk ; [...]
2019-12-09meta-author
New InGaAs Structure Wafer
Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a [...]
Polarization degree and vector angle effects on a CdZnTe focal plane performance
To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining [...]
PAM XIAMEN offers 3″ Silicon Wafer-16 as follows, while silicon wafer list includes, but not limited to the following.
3″ Si wafer, R≤100Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: P/type boron
3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> direction
5. Resistivity: ≤100Ωcm
6. Primary surface: [...]
2019-11-20meta-author