Characterization and comparison of commercially available silicon carbide (SIC) power switches

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Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches

Published by:

K. Haehre ; M. Meisser ; F. Denk ; R. Kling

Karlsruhe Instiute of Technology (KIT), Light Technology Institute (LTI), Germany, Engesserstr. 13, D-76131 Karlsruhe

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Abstract

In this paper the electrical and thermal characteristics of commercially available SiC devices, normally-on and -off JFETs as well as a MOSFET, and of a high-voltage Si- MOSFET are presented. The mentioned characteristics are compared and it is shown which characteristics are the limiting factors when designing power electronics devices based on SiC power switches.

Subjuect(s):SiC;JFET;MOSFET;switching-losses;thermal analysis

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… [9] J. Lutz, H. Schlangenotto, U. Scheuermann and R. De Doncker, Semiconductor Power Devices,Heidelberg: Springer-Verlag, 2011. [10] XIAMEN POWERWAY ADVANCED MATERIAL CO.,ISilicon Carbide Substrates – Product Specifications,” Xiamen, China, 2011 …”

Source:https://ieeexplore.ieee.org/abstract/document/6242017/authors

About Xiamen Powerway Advanced Material Co., Ltd

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

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