Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
PAM XIAMEN offers Si+SiO2+Pt Thin Film.
Si+SiO2+Pt Thin Film
SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm)
Silicon Wafer Specifications:
Conductive type: SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm)
Resistivity: [...]
2019-05-16meta-author
Sapphire ingot can be offered by PAM-XIAMEN, one of sapphire ingot manufacturers. The chemical composition is alumina and is composed of three oxygen atoms and two aluminum atoms covalently bonded together. Sapphire crystal structure is a hexagonal lattice structure, and the commonly used section [...]
2021-09-10meta-author
SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of View the MathML source
using silane [...]
PAM XIAMEN offers PMN-PT Crystals.
10 x 10 x 0.5 mm PMN-PT Piezoelectric Crystal (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
10 x 10 x 0.5 mm Pyroelectric Crystal PMN-PT (111) Pb(Mg1/3Nb2/3)O3-PbTiO3 SSP
5 x 10 x 0.5 mm PMNT Electro-Optic Crystal (001) Pack SSP
5 x 10 x 0.5 mm PMNT [...]
2019-03-14meta-author
PAM XIAMEN offers Ni -Polycrystalline Substrate & Foil & Foam.
tomic number: 28
Atomic number: 28
Atomic mass: 58.71 g.mol -1
Atomic mass: 58.71 g.mol -1
Crystal structure: F.C.C
Crystal structure: F.C.C
Lattice Constant: 0.325 nm
Lattice Constant: 0.325 nm
Ni -Polycrystalline Substrate & Foil & Foam
Ni Metallic Substrate ( polycrystalline): 1″ x 1″ x 1.0 mm, 1 side [...]
2019-05-13meta-author