

PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline). General Properties for Titanium Symbol Ti Atomic Number 22 Atomic Weight: 47.867 Crystal structure: HCP Lattice constant at room temperature a: 0.295 nm Lattice constant at room temperature b: 0.468 nm Density: 4.506 g/cm3 Melting Point: 1668°C [...]
PAM-XIAMEN can offer UV LED epi wafer, which is grown by our MOCVD range from 275nm to 405nm. Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be a competitive technology that can drive new innovative applications. UV-LED has [...]
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates Structural properties of GaN films grown on vicinal sapphire (0001) substrates with various vicinal angles by plasma-assisted molecular beam epitaxy are investigated. High-resolution x-ray diffraction (HRXRD) results reveal the dramatic [...]
PAM XIAMEN offers Silver Single Crystal & Substrate. PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness. PAM [...]
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 200 P/P FZ 500-1,000 SEMI, , in hard ccassettes of 4, 5 & 5 wafers n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 225 P/P FZ >100 SEMI, , Individual cst, 1 very deep scratch n-type Si:P [100] 2″ 280 P/E FZ 60-90 SEMI Prime n-type Si:P [100] 2″ 150 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 2-5 SEMI Prime n-type Si:P [111-3.5° towards[110]] ±0.5° 2″ 279 ±15 P/E FZ >2,000 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000-4,000 SEMI Prime, TTV<5μm, Both-sides Epi-Ready n-type Si:P [111] ±0.5° 2″ 280 P/P FZ 2,000-4,000 SEMI Prime, TTV<5μm n-type [...]