5-4 SiC Semiconductor Crystal Growth
As of this writing, much of the outstanding theoretical promise of SiC electronics highlighted in the
previous section has largely gone unrealized. A brief historical examination quickly shows that serious
shortcomings in SiC semiconductor material manufacturability and quality have greatly hindered the
development [...]
2018-06-28meta-author
2-2.Wafer Thickness, Center Point
Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to [...]
2018-06-28meta-author
5-5-2 SiC-Selective Doping: Ion Implantation
The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for
maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated
long term at high temperatures. Unfortunately, this characteristic also largely [...]
2018-06-28meta-author
2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2018-06-28meta-author
5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates
Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
2018-06-28meta-author
2-34.Chemical Mechanical Polishing
Chemical Mechanical Polishing/Planarization is short as CMP, a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing.
2018-06-28meta-author