Products
Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows:
1)GaN epitaxial growth on sapphire template;
Conduction Type: Si [...]
N-type or P-type 125mm silicon wafer can be supplied with the orientation of <111> or <100>. More specs are shown as following:
1. 125mm Silicon Substrate Wafer List
No. 1
ID
Dia
Type
Dopant
Ori
Res
(Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM2683
125mm
N
As
<111>
<0.0035
375um
SSP
MECH
Mechanical Grade. EPI Layer: N/Phos Res: 4.59-5.874ohm.cm 12-16um
PAM2684
125mm
N
P
<100>
<0.001
3000um
SSP
Test
3mm thick
PAM2685
125mm
P
B
<111>
43485
525-575um
SSP
Test
Sold As-Is
PAM2686
125mm
P
B
<111>
43485
500-550um
SSP
Test
Sold As-Is
No. 2
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
(Ωcm)
Comment
PAM2687
p-type Si:B
[100]
5″
889 [...]
2019-02-20meta-author
PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented [...]
2019-04-26meta-author
A commercially viable GaN LED was an incredibly hard nut to crack that required the development of a buffer layer and a novel approach to p-type doping. But 20 years ago it all came together. Richard Stevenson looks back at the device’s birth. (more…)
2012-03-06meta-author
As one of leading silicon carbide wafer manufacturers, PAM-XIAMEN offers you SiC substrate with 1mm or 2mm thickness. Silicon carbide (SiC) substrate is the cornerstone of the application of gallium nitride (GaN) and silicon carbide in the third generation of semiconductor materials. In recent years, [...]
2022-05-10meta-author
Development of a gate metal etch process for gallium arsenide wafers
The reactive ion etching of TiWN, which is used as a gate metal on gallium-arsenide device wafers, was studied in a parallel-plate, single-wafer plasma reactor operating at a frequency of 13.56 MHz. We discuss [...]