CONGRESSIONAL RESEARCH ARM PRODUCES REPORT ON THE U.S. CHIP INDUSTRY
A newly released report by a non-partisan research arm of Congress underscores how semiconductors’ economic and military importance has made the industry’s health a focus of congressional interest for nearly 70 years. The report, produced by the [...]
2016-07-20meta-author
Epitaxial InGaAsP / InP photodiode wafer is offered for making InP-based optoelectronic devices. For such devices, InGaAsP quaternary material is commonly grown on InP substrate as ohmic contact layers. Quaternary InGaAsP thin film epitaxial on InP is sensitive to InP luminescence. InGaAsP / InP [...]
2022-04-15meta-author
InGaN (Indium Gallium Nitride) epi-wafer with MQWs is provided, which is a light-emitting layer for fabricating blue or green LED. Indium gallium nitride is a mix material of gallium nitride and indium nitride and often grown on GaN buffer on sapphire, silicon or SiC substrate. Researches carried [...]
2020-07-14meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
6″
675
P/E
1-100
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
800
E/E
1-50
SEMI, 1Flat (57.5mm), TTV<5μm
p-type Si:B
[100]
6″
320
P/E
0.001-0.030
JEIDA Prime
p-type Si:B
[100]
6″
675
P/P
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[100]
6″
675
P/E
0.001-0.005
SEMI Prime, 1Flat (57.5mm)
p-type Si:B
[111-4.0°] ±0.5°
6″
625
P/E
4-15 {7.1-8.8}
SEMI Prime, 1 JEIDA Flat(47.5mm)
p-type Si:B
[111] ±0.5°
6″
675
E/E
0.010-0.025
SEMI, 1Flat (57.5mm)
n-type Si:P
[100]
6″
925 ±15
E/E
5-35 {12.5-29.7}
JEIDA Prime, TTV<5μm
n-type Si:P
[100]
6″
675
P/E
2.7-4.0
SEMI Prime
n-type Si:P
[100]
6″
250 ±5
P/P
1-3
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
Hybrid Chips of Gallium Nitride and Silicon
Researchers at MIT say they’ve made a big step toward combining the capabilities of the silicon used in computer chips with properties of the compound semiconductors found in lasers and high-powered electronics. In the October issue of IEEE Electron [...]