SiC wafers can be offered for laser power converter researches, additional information please refer to https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Any questions please contact our sales team with victorchan@powerwaywafer.com.
The current high-power laser transmission technology faces two major limitations in improving the efficiency of optoelectronic receivers: inherent entropy loss [...]
2024-05-08meta-author
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
General Properties for Tantalum
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 [...]
2019-05-20meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.
2020-03-10meta-author
When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity of silicon carbide should be very high, but [...]
2020-08-25meta-author
Banknotes, documents, branded products, and sensitive goods like pharmaceuticals or technical components are often marked to distinguish them from imitations. However, some counterfeiters have learned to copy conventional fluorescent tags. In the journal Angewandte Chemie, Chinese scientists have now introduced a new, exceptional anti-counterfeit ink [...]
2017-10-30meta-author
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author