Will cell phone windows come to the rescue?
Will cell phone windows come to the rescue?
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3 We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate: 1. Specification of Undoped Freestanding GaN Wafer Item PAM-FS-GaN-50-U Dimension 10 x 10.5 mm2 Thickness 380+/-50um Orientation C plane (0001) off angle toward M-axis 0.35 ±0.15° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5x 106 cm-2 (calculated by CL)* Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room 2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(20-21)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
AlxIn1-xP is a ternary semiconductor material grown with X composition in the range of 0.5~0.52, which is lattice matched to GaAs. AlxIn1-xP is commonly used as a window layer in high-bandgap III-V solar cells, where it is responsible for reducing surface recombination by reflecting [...]
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline). General Properties for Titanium Symbol Ti Atomic Number 22 Atomic Weight: 47.867 Crystal structure: HCP Lattice constant at room temperature a: 0.295 nm Lattice constant at room temperature b: 0.468 nm Density: 4.506 g/cm3 Melting Point: 1668°C [...]
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