KCL POTASSIUM CHLORIDE CRYSTAL SUBSTRATES

  • Home
  • News
  • KCL POTASSIUM CHLORIDE CRYSTAL SUBSTRATES

KCL POTASSIUM CHLORIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.

                                        Main Parameters
Crystal structure face centered cubic, M3  a = 6.291 Å
Growth method crystallization process
Density 1.98（g/cm3）
Melting point 770 °C
Refractive index 1.49025 (at 589 nm)
T 0.91
Nf 0.01114
Surface roughness <10 nm due to hygroscopic nature (CMP polished to Ra < 0.5nm)
Orientation <111>, <110>, <100>
Size 10×10×2.0mm, 20*20*2.0mm or other sizes
Surface polishing Single side or double side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

2019-03-12

Share this post

Related Posts

2″ Silicon Wafer-13

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 2″ 280 P/E/P 1-20 SEMI Prime p-type Si:B [111-1.5°] 2″ 400 P/E 1-10 SEMI Prime p-type Si:B [111] 2″ 500 P/E 1-10 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 280 P/E 0.5-0.6 SEMI Prime p-type Si:B [111-3°] 2″ 300 P/P 0.016-0.018 SEMI Prime p-type Si:B [111-3.5°] 2″ 280 P/P 0.01-0.02 SEMI Prime p-type Si:B [111] 2″ 600 P/E 0.01-0.05 SEMI Prime p-type Si:B [111-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] 2″ 1000 P/P ~4 NO Flats n-type Si:P [110] 2″ 950 P/P 2.5-3.5 1 F @ <1,-1,0> n-type Si:P [110] 2″ 450 P/P ~0.6 1 F @ <001> n-type Si:P [110] 2″ 1000 P/P 0.5-1.0 PF<111> SF 109.5° n-type Si:P [100] 2″ 500 P/P 800-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E >50 SEMI Prime, n-type Si:P [100] 2″ 5000 P/E 42-53 SEMI Prime, , Individual cst n-type [...]

2019-03-07meta-author
Au (epi) /Cr coated SiO2/Si substrate

PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate. Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm Au( highly oriented [...]

2019-04-26meta-author
3″ Silicon Wafer-3

PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 76.2 P Boron CZ -100 .001-.005 350-400 P/E PRIME 76.2 P Boron CZ -100 .005-.02 350-400 P/E PRIME 76.2 P Boron FZ -100 >3000 350-400 P/E PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E/DTOx PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E/Ni PRIME 76.2 P Boron CZ -100 1-20 350-400 P/E/WTOx 76.2 P Boron CZ -100 1-20 450-500 P/P PRIME 76.2 P Boron CZ -100 1-20 500-550 P/E PRIME 76.2 P Boron CZ -100 1-10 825-875 P/P PRIME 76.2 P Boron CZ -100 1-20 850-1000 P/P PRIME 76.2 P Boron CZ -100 1-20 1000-1050 P/E PRIME 76.2 P Boron CZ -111 1-20 300-350 P/P PRIME 76.2 P Boron CZ -111 1-20 350-400 P/E PRIME 76.2 P Boron CZ -110 >100 275-325 P/P PRIME 76.2 P Boron CZ -110 1-20 350-400 P/E PRIME 76.2 P Boron CZ -110 100-200 800-850 P/P PRIME 76.2 Any Any CZ Any Any 250-500 P/E TEST 76.2 Any Any CZ -100 1-100 330-430 P/E PRIME 76.2 Intrinsic Undoped FZ -100 > 15000 350-400 P/E PRIME 76.2 Intrinsic Undoped FZ -111 > 15000 350-400 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]

2019-03-04meta-author
GaAs Substrate for LED with Silicon Dopant

The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]

2021-06-17meta-author
Ceramic ALN SUBSTRATE-1

PAM XIAMEN offers Ceramic ALN SUBSTRATE. 100X100 Thickness 0.5±0.03mm Item Unit Value Test Standard 1）Colour —- Gray 3.2 2）Density g/cm³ ≥3.33 GB/T 2413 3）Thermal Conductivity 20℃，W/(m·K) ≥170 GB/T 5598 4）Dielectric Constant 1MHz 8~10 GB/T 5594.4 5）Dielectric Strength KV/mm ≥17 GB/T 5593 6）Flexural Strength MPa ≥450 GB/T 5593 7）Camber Length‰ ≤2‰ 　 8）Surface roughness Ra μm 0.3~0.6 GB/T 6062 9）Water absorption % 0 GB/T 3299-1996 10)Volume resistivity 20℃，Ω.cm ≥1013 GB/T 5594.5 11）Thermal expansivity 10-6/℃ 20~300℃ 2~3 GB/T5593 300~800℃ 2.5~3.5   For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen [...]

2019-07-03meta-author
Graphite & Graphene Substrate-1

PAM XIAMEN offers Graphene film on Ni/SiO2/Si. Graphene is an allotrope of carbon, whose structure is one-atom-thick planar sheets of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. The term graphene was coined as a combination of graphite and the [...]

2019-05-06meta-author