PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.

                                        Main Parameters
Crystal structure face centered cubic, M3  a = 6.291 Å
Growth method crystallization process
Density 1.98(g/cm3)
Melting point 770 °C
Refractive index 1.49025 (at 589 nm)
T 0.91
Nf 0.01114
Surface roughness <10 nm due to hygroscopic nature (CMP polished to Ra < 0.5nm)
Orientation <111>, <110>, <100>
Size 10×10×2.0mm, 20*20*2.0mm or other sizes
Surface polishing Single side or double side polished

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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