PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.
Main Parameters | |
Crystal structure | face centered cubic, M3 a = 6.291 Å |
Growth method | crystallization process |
Density | 1.98(g/cm3) |
Melting point | 770 °C |
Refractive index | 1.49025 (at 589 nm) |
T | 0.91 |
Nf | 0.01114 |
Surface roughness | <10 nm due to hygroscopic nature (CMP polished to Ra < 0.5nm) |
Orientation | <111>, <110>, <100> |
Size | 10×10×2.0mm, 20*20*2.0mm or other sizes |
Surface polishing | Single side or double side polished |
For more information, please visit our website: https://www.powerwaywafer.com,
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.