5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates
Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
2018-06-28meta-author
2-28.WARP
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline [...]
2018-06-28meta-author
1-4.Density
The mass density or density of a material is its mass per unit volume. The symbol most often used for density is ρ (the lower case Greek letter rho). Mathematically, density is defined as mass divided by volume:
2018-06-28meta-author
5-7-2 Further Recommended Reading
2018-06-28meta-author
2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
2018-06-28meta-author
5-4-1 Historical Lack of SiC Wafers
Reproducible wafers of reasonable consistency, size, quality, and availability are a prerequisite for
commercial mass production of semiconductor electronics. Many semiconductor materials can be melted
and reproducibly recrystallized into large single crystals with the aid of a seed crystal, such as [...]
2018-06-28meta-author