2-28.WARP
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline containing both concave and convex regions.
2-31.N type A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2-23.Micropipe density A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
2-8.Secondary Flat Orientation A at of shorter length than the primary orientation at,whose position with respect to the primary orientation at identies the face of the wafer.
2-30.Dopant A dopant, also called a doping agent, is a trace impurity element that is inserted into a substance (in very low concentrations) in order to alter the electrical properties or the opticalproperties of the substance. In the case of crystalline substances, the atoms of [...]
5-3 Applications and Benefits of SiC Electronics Two of the most beneficial advantages that SiC-based electronics offer are in the areas of high-temperature and high-power device operation. The specific SiC device physics that enables high-temperature and high-power capabilities will be examined first, by several examples of revolutionary [...]
5-4-3 Growth of Hexagonal Polytype SiC Wafers In the late 1970s, Tairov and Tzvetkov established the basic principles of a modified seeded sublimation growth process for growth of 6H-SiC. This process, also referred to as the modified Lely process,was a breakthrough for SiC in that [...]
