2-28.WARP
Warp is the difference between the maximum and the minimum distances of the median surface of a free, un-clamped wafer from the reference plane defined above. This definition follows ASTM F657, and ASTM F1390,which deviation from a plane of a slice or wafer centerline containing both concave and convex regions.
5-6-4-1-2 Bipolar and Hybrid Power Rectifiers For higher voltage applications, bipolar minority carrier charge injection (i.e., conductivity modulation) should enable SiC pn diodes to carry higher current densities than unipolar Schottky diodes whose drift regions conduct solely using dopant-atom majority carriers . Consistent with silicon [...]
3-9. Comet Tails Comet tails have a discrete head and trailing tail. These features are aligned parallel to the major at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as [...]
2-9.(Area) Wafer Contamination Any foreign matter on the surface in localized areas which is revealed under high intensity (or diffuse) illumination as discolored, mottled, or cloudy appearance resulting from smudges, stains or water spots.
2-2.Wafer Thickness, Center Point Thin (thickness depends on wafer diameter, but is typically less than 1mm),circular slice of single-crystal semiconductor material cut from the ingot of single crystal semiconductor; used in manufacturing of semiconductor devices and integrated circuits; wafer diameters may range from 5mm to [...]
3-3. Dimpling A texture resembling the surface of a golf ball. Speci ed in % affected area.
5-5-3 SiC Contacts and Interconnect All useful semiconductor electronics require conductive signal paths in and out of each device as well as conductive interconnects to carry signals between devices on the same chip and to external circuit elements that reside off-chip. While SiC itself is theoretically capable [...]
