2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
2-5.Misorientation
In wafers cut intentionally “off orientation”, the angle between the projection of the normal vector to the wafers
surface onto a {0001} plane and the projection on that plane of the nearest <11-20> direction.
3-11. Particles Particles have the appearance of eyes and if present are usually concentrated at the wafer edges and not within the speci ed area. If present, count once per occurrence.Two particles within 200 microns count as one.
5-5 SiC Device Fundamentals To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the [...]
In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium. Refractive index is the basic property of optical crystals, and it is an important parameter [...]
5-5-4 Patterned Etching of SiC for Device Fabrication At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques. The reader should consult References 122–124 which contain summaries [...]
2-32.Semi-insulating Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]
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