PAM XIAMEN offers LD Bare Bar for 940nm@cavity 3mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 50% Output Power: 200W Cavity Length:3mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author
PAM XIAMEN offers BaSrTiO3 Film on substrate. BaSrTiO3 Film ( 400nm) on Nb.SrTiO3(wt 0.7%), 10x10x0.5mm,1sp Ba1-xSrxTiO3 is an excellent enhanced dielectronic film grown on Nb doped SrTiO3 conductive substrate via special spin coating: Film Sppecifications: Chemical composition: BaSrTiO3 Film thickness: ~ 400 nm Crystalline: Polycrystal Growth [...]
2019-04-26meta-author
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 400 P/P 0.001-0.005 SEMI Prime p-type Si:B [100] 4″ 500 P/P 0.001-0.005 SEMI Prime, Wafers with striation marks p-type Si:B [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, TTV<5μm, Bow<15μm, Warp<30μm p-type Si:B [100] 4″ 525 P/E 0.001-0.002 SEMI Prime, TTV<4μm p-type Si:B [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, TTV<5μm p-type Si:B [100] 4″ 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces) p-type Si:B [100] 4″ 800 C/C 0.001-0.005 SEMI, With striation marks p-type Si:B [100] 4″ ? P/P SEMI Test p-type Si:B [100] 4″ 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, TTV<3μm p-type Si:B [111] 4″ 350 P/E 2-3 Prime, NO Flats p-type Si:B [111] 4″ 1000 P/P 1-10 SEMI Prime, Cassettes of 10 [...]
2019-03-05meta-author
25.4 (1 inch) Silicon Wafers PAM XIAMEN offers 1″ silicon wafers. If you don’t see what you need, pleaes email us your specs and quantity. Item Dia Thickness (um) Orientation Type Dopant Resistivity (Ohm-cm) Polish Remark PAM1901 25.4mm 20000um <111> P B >1000 DSP FZ PAM1902 25.4mm 400um <100> P B ANY SSP Thickness is: 400+/-100um. PAM1903 25.4mm 500um <100> ANY SSP Wafers have particles. Wafers sold “As-Is”. PAM1904 25.4mm 280um <111> Undoped Undoped >2000 SSP Intrinsic FZ PAM1905 25.4mm 73.5um <100> Undoped Undoped >5000 DSP FZ, Float Zone PAM1906 25.4mm 500um <100> P B .01-.05 DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1907 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, [...]
2019-02-15meta-author
The SiC wafer application fields are mainly divided into the electronic power field, the radio frequency field, the photoelectric field, and other fields. Among them, the electronic power field and the radio frequency field are the most important applications, and the advantages of silicon carbide wafer usage are [...]
2021-04-13meta-author