Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]
2022-06-06meta-author
PAM XIAMEN offers 2″ FZ Intrinsic Silicon Wafer
Silicon, 2″ Intrinsic
Orientation <100>,
Resistivity >10,000Ωcm,
Thickness 280±10um, DSP,
TTV<5um, Bow/Warp<30um,
2 SEMI Flats, Prime Grade,
Particle @0.3µm, <20 count
Good surface quality for Thermal Oxide growth
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
Product Specifications
PAM XIAMEN offers Freestanding GaN Substrate
2″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
2″(50.8)+/-1mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
16+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
8+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation Density
<5×10^6cm-2
Marco Defect Density
A grade<=2cm-2 B grade>2cm-2
TTV
<=15um
BOW
<=20um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
≥ 90 %
Usable Area
1.5″GaN Free-standing Substrate
Item
PAM-FS-GaN50-N
PAM-FS-GaN50-SI
Conduction Type
N-type
Semi-insulating
Size
1.5″(38.1)+/-0.5mm
Thickness
260+/-20um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
12+/-1mm
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
6+/-1mm
Resistivity(300K)
<0.5Ω·cm
>10^6Ω·cm
Dislocation [...]
2019-03-15meta-author
Silicon carbide (SiC) wafer are available, for more wafer information please click https://www.powerwaywafer.com/sic-wafer. The performance of SiC wafer slicing determines the processing level of subsequent thinning and polishing. Slicing is prone to cracks on the surface and subsurface of the SiC wafer, increasing the [...]
2022-08-05meta-author
PAM XIAMEN offers TGG (Terbium Gallium Garnet).
TGG singlecrystal( Terbium Gallium Garne ) is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, excluding 475 – 500nm.
TGG Single Crystal Substrate: (111) 10 x 10 x. [...]
2019-05-20meta-author
PAM-XIAMEN can supply SiC epitaxial wafers, more wafer specifications please read: https://www.powerwaywafer.com/sic-wafer/sic-epitaxy.html.
Although SiC epitaxial wafers exhibit excellent characteristics in high-voltage and high current devices, there are still several types of defects that have a negative impact on the electrical performance of SiC devices. Among them, [...]
2024-04-11meta-author