Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]
2018-06-28meta-author
Total Thickness Variation (TTV): The maximum variation in the wafer thickness. Total Thickness Variation is generally determined by measuring the wafer in 5 locations of a cross pattern (not too close to the wafer edge) and calculating the maximum measured difference in thickness. The [...]
2018-06-28meta-author
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology
The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide–
semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational
device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme
usefulness and success of [...]
2018-06-28meta-author
5-3-3 System Benefits of High-Power High-Temperature SiC Devices
Uncooled operation of high-temperature and high-power SiC electronics would enable revolutionary
improvements to aerospace systems. Replacement of hydraulic controls and auxiliary power units with
distributed “smart” electromechanical controls capable of harsh ambient operation will enable substantial
jet-aircraft weight savings, reduced [...]
2018-06-28meta-author
5-5-2 SiC-Selective Doping: Ion Implantation
The fact that diffusion coefficients of most SiC dopants are negligibly small (at 1800°C) is excellent for
maintaining device junction stability, because dopants do not undesirably diffuse as the device is operated
long term at high temperatures. Unfortunately, this characteristic also largely [...]
2018-06-28meta-author
2-12.Edge Exclusion
The outer annulus of the wafer is designated as wafer handling area and is excluded from surface nish criteria (such as scratches, pits, haze, contamination, craters,dimples, grooves, mounds, orange peel and saw marks). This annulus is 2 mm for 76.2 mm substrates, and [...]
2018-06-28meta-author