PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
330
P/E
3-7
SEMI Prime
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime
n-type Si:P
[111]
2″
5000
P/E
2.0-3.1
Prime, NO Flats, Individual cst
n-type Si:P
[111]
2″
5000
P/E
2-3
Prime, NO Flats, Individual cst
n-type Si:P
[111-8°]
2″
280
P/E
1.3-1.8
SEMI Prime,
n-type Si:P
[111-3.5°]
2″
280
P/E
1-30
SEMI Prime,
n-type Si:P
[111-2.5°]
2″
500
C/C
1-20
SEMI Prime
n-type Si:P
[111]
2″
7500
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:Sb
[111-3°]
2″
300
P/E
~0.02
SEMI Prime
n-type Si:Sb
[111-1° towards[112]]
2″
500
P/E
0.017-0.026
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
200
P/E
~0.01
SEMI Prime,
n-type Si:Sb
[111]
2″
280
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
280
P/E
0.008-0.020
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.0030-0.0034
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.001-0.005
SEMI Prime,
n-type Si:As
[111-4°]
2″
350
P/E
0.001-0.005
SEMI [...]
2019-03-07meta-author
PAM-XIAMEN offers 10*10mm2 SI (Semi-insulating) Freestanding GaN Substrate, which has a resistivity greater than 106 ohm-cm. Semi-insulating gallium nitride substrate with the advantages high critical breakdown electric field and good thermal stability are widely used in high-frequency and high-power devices. Following listed is one of the specifications:
1. [...]
2020-08-17meta-author
PAM XIAMEN offers 5x5mm & 10x10mm single crystal.
5x5mm & 10x10mm
Ge square substrates (100)
Ge (100) square substrate,N-type undoped
Ge Substrate (100) 5x 5×0.5 mm, 1 SP, Undoped ,N-type.R>50 ohm.cm
Ge Substrate (100) 5x 5×0.5 mm, 2SP, Undoped
Ge Substrate (100) 10x10x 0.35 [...]
2019-04-23meta-author
Highlights
•
Two kinds of “BCN” diamond materials with different additives have been synthesized under HPHT.
•
The “BCN” diamonds synthesized from different additive systems show different morphologies and colors, sizes.
•
The results of FTIR and XPS spectrum indicate bonding between B, C and N of “BCN” diamonds from [...]
2017-11-20meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm
5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm
5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm
5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm
5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm
5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm
5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm
5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm
5″Ø×290mm ingot [...]
2019-03-08meta-author
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author