PAM-XIAMEN can supply SiC crystals, more specifications are found in https://www.powerwaywafer.com/sicsilicon-carbide-boule-crystal.html.
Mid infrared laser (3-5μm) has important applications in environmental monitoring, gas molecule recognition, coherent tomography, and other fields. Especially in recent years in the research of generating single attosecond pulses from high-order harmonics, due to the [...]
2024-04-26meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
6″ Diameter Wafers [...]
2019-05-15meta-author
Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
Operation
Symbol
Min.
Typ.
Max.
Unit
Center wavelength
λ
—
808
—
nm
Output powe
P。
—
10.5
—
w
Operation mode
—
—
CW
—
—
Geometrical
Emitter width
w
—
190
—
μm
Cavity length
L
—
4000
—
μm
Chip width
W
—
500
—
μm
Chip height
H
—
150
—
μm
Electro Optical Data
Threshold curen
Ith
—
1.6
—
A
Operating current
Iop
—
10
—
A
Operating voltage
Vop
—
1.8
—
V
Slope efficiency
ηd=PJ(lop-Ith)
—
1.2
—
WIA
Total conversion efficiency
η=Po/(lopxVop)
—
58
—
%
Slow axis divergence
θn”
—
10
—
degrees
Fast axis divergence
θ1
—
35
—
degrees
Spectral width
△λ
—
3
—
nm
Polarization
—
—
TE
—
—
For more information, please contact us email [...]
2019-05-09meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7
GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author
PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN M-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author