PAM XIAMEN offers Cr – Foil and Substrate.
Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1
Polycrystal Cr ( Chromium ) metallic substrate
Purity: > 99.99%
Substrate dimension: 10×10 x 1.0 mm,
Surface finish: one side polished
Colbat Properties
Name: [...]
2019-05-08meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ 4″Ø×105mm ground ingot, n-type Si:P[111] ±2°, (1-2)Ohmcm
FZ 4″Ø×374mm ground ingot, n-type Si:P[111] ±2°, (429.4-453.7)Ohmcm, MCC Lifetime=11,866µs
FZ 4″Ø×400mm ground ingot, n-type Si:P[111] (446.9-458.9)Ohmcm, MCC Lifetime=10,670µs
FZ 4″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, MCC Lifetime>1,200μs, Ground, (6 ingots: 294mm, 296mm, 296mm, 294mm, 219mm, 112mm)
FZ 4″Ø ingot Intrinsic [...]
2019-03-08meta-author
What is the Growth Facet?
In the central region of SiC {0001} wafer, the doping concentration is usually relatively high, such as the dark color observed in the central region, which is due to the enhanced impurity doping in facet growth, as shown in Fig. [...]
2021-01-22meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-14
Silicon wafer
dia 4 inch
thickness 500 um
P type boron doped or N doped
resistivity 1-10 ohm cm
orientation 100
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-12meta-author
PAM XIAMEN offers GGG single crystal.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
Lattice constant
12.376 Å
12.426 Å
12.480 Å
12.505Å
12.507 Å
12.554 Å
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
GGG, (111), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 2sp
GGG, (110), 5x5x0.5mm, 1sp
GGG (111), 10x10x0.5mm, 2sp
GGG, (111), 10x10x0.5mm, 1sp
GGG, [...]
2019-04-26meta-author
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation [...]